130-nm KrF lithography for DRAM production with 0.68-NA scanner

Kawamura, Eiichi; Nagai, Kiyoko; Kanemitsu, Hideyuki; Tabata, Yasuko; Inoue, Soichi

doi:10.1117/12.389088

Cited by 3 publications

(2 citation statements)

References 1 publication

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“…The resists were composed of a photoacid generator and acetal-derivatized hydroxystyrene polymers, which are commonly used in KrF lithography. [29][30][31] Each resist was spin-coated onto a 300 mm silicon wafer primed with hexamethyldisilazane (HMDS) and baked at 120 C for 90 s on a hot plate to form 160-nm-thick films. The resist film was exposed using an EB exposure system, Advantest F3000, with an acceleration voltage of 50 keV and a KrF excimer laser exposure system.…”

Section: Materials and Processingmentioning

confidence: 99%

Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology

Kon¹,

Kojima²,

Takahashi³

et al. 2012

Jpn. J. Appl. Phys.

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We investigated long-range critical dimension (CD) error factors, such as fogging and develop loading, to improve CD uniformity in electron-beam direct-writing (EBDW) technology. It was found that the impact of both effects reached 20 mm and the CD of the monitor pattern decreased by no less than 10%. Fogging and develop loading were separated by comparing the newly designed test patterns that were exposed using both EB and a krypton-fluoride excimer laser. We confirmed that the impact of fogging and develop loading by arranging dummy patterns with a density of 40% was estimated to be +8.9 and -18.9% in the CD, respectively. Based on success in separating each effect, fogging and develop loading were decreased by applying an antistatic agent and multipuddle development, respectively.

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Section: Materials and Processingmentioning

confidence: 99%

Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology

Kon¹,

Kojima²,

Takahashi³

et al. 2012

Jpn. J. Appl. Phys.

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“…3 We, the manufacturer of laser equipment, believe that it is necessary to develop and supply this higher performance KrF excimer laser, which will form an integral part of the next generation's high NA and high throughput scanner. The advancement of super-resolution exposure technologies such as phase-shift or transformed illumination technology has made this feasible, even though the 180-nm design rule was conventionally thought to be the limit.…”

Section: Introductionmentioning

confidence: 99%

Extremely high-NA high-throughput-scanner-compatible 4-kHz KrF excimer laser for DUV lithography

Mutoh¹,

Enami²,

Kakizaki³

et al. 2001

SPIE Proceedings

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KrF excimer laser lithography has applications for the less-than-130-nm-design rule by improving the exposure technology, i.e., super-resolution technology. We therefore developed a 4-kHz KrF excimer laser which corresponds to the next generation's high throughput and high number of aperture (NA) scanner requirements, and achieved low cost of operation (CoO) for this light source for mass production uses. We estimated the basic performance requirements of our device, and developed the necessary high repetition rate operation technology that corresponds to a high throughput scanner, and achieved 4-kHz/30-W laser output. We also developed pulse stretching technology for ultra line narrowing, which can accommodate the high NA lens, and achieved more than 30 ns pulse width (Tis). We can thus expect less than 0.45-pm spectral bandwidth (FWHM). Moreover, the relation of the repetition rate operation and main module life was evaluated, and the optimal repetition frequency, which considers CoO, was adopted.

show abstract

Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology

Kon¹,

Kojima²,

Takahashi³

et al. 2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

130-nm KrF lithography for DRAM production with 0.68-NA scanner

Cited by 3 publications

References 1 publication

Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology

Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology

Extremely high-NA high-throughput-scanner-compatible 4-kHz KrF excimer laser for DUV lithography

Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology

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