155-μm VCSEL with polarization-independent HCG mirror on SOI

Tsunemi, Yoshihiro; Yokota, Nobuhide; Majima, Shota; Ikeda, Kazuhiro; Katayama, T.; Kawaguchi, Hitoshi

doi:10.1364/oe.21.028685

Cited by 35 publications

(17 citation statements)

References 14 publications

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“…An alternative technique is heterogeneous integration where a III-V epitaxial structure grown on its native substrate is bonded to the SiP IC using direct or adhesive bonding [5]. This technique has been used to demonstrate silicon-integrated InP-based hybrid vertical-cavity lasers for surface and in-plane emission [6]- [8]. The hybrid cavity, which implies that the standing wave optical field extends over both the III-V and the silicon-based parts of the cavity, provides an opportunity to tap off light to an in-plane waveguide using e.g.…”

Section: Introductionmentioning

confidence: 99%

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Kumari

Haglund

Gustavsson

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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Abstract-The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity verticalcavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III-V "half-VCSEL" to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO 2 layer on the "half-VCSEL," can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85°C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.

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Section: Introductionmentioning

confidence: 99%

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Kumari

Haglund

Gustavsson

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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“…This has previously been successfully demonstrated using InP-based structures attached to a silicon high-contrast grating on a silicon substrate [4], [5]. To date, small signal modulation bandwidths up to 2.5 GHz and large signal data transmission at bit rates up to 5 Gb/s have been demonstrated with heterogeneously integrated VCSELs [5].…”

Section: Introductionmentioning

confidence: 98%

20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs

Haglund

Kumari

Westbergh

et al. 2016

IEEE Photon. Technol. Lett.

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Abstract-We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surfaceemitting lasers (VCSELs). The VCSELs consist of a GaAs-based "half-VCSEL" attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxanebis-benzocyclobutene adhesive bonding. A 5 µm oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance. IndexTerms-High-speed modulation, large signal modulation, optical interconnects, semiconductor lasers, silicon photonics, vertical cavity surface-emitting laser (VCSEL).

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“…Among the possible light source integration technologies, the hybrid vertical-cavity laser (HVCL) by heterogeneous integration is attractive as it has the potential for low drive current, high efficiency, and small footprint [2][3][4]. Coupling to an in-plane waveguide can be accomplished by e.g.…”

Section: Introductionmentioning

confidence: 99%

Hybrid vertical-cavity laser integration on silicon

et al. 2017

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The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.

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155-μm VCSEL with polarization-independent HCG mirror on SOI

Cited by 35 publications

References 14 publications

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs

Hybrid vertical-cavity laser integration on silicon

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