1550 nm-band VCSEL 0.76 mW singlemode output power in 20–80°C temperature range

Syrbu, A.; Mereuta, A.; Mircéa, A.; Caliman, A.; Яковлев, В.; Berseth, C.‐A.; Suruceanu, G.; Rudra, A.; Deichsel, E.; Kapon, E.

doi:10.1049/el:20040222

Cited by 16 publications

(7 citation statements)

References 8 publications

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“…Single-mode power and temperature operation range have been gradually increased as a result of substantial efforts in long-wavelength VCSEL research [1][2][3][4][5][6][7][8][9] . So far, the best results have been demonstrated using wafer fusion to bond one or more epitaxially grown AlGaAs/GaAs distributed Bragg reflector (DBR) stacks to the active region, which provides both thermal and optical optimum design of the VCSEL mirrors.…”

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confidence: 99%

High power single mode VCSELs emitting at 1320nm wavelength

Iakovlev¹,

Mircéa²,

Mereuta³

et al. 2007

2007 Conference on Lasers and Electro-Optics (CLEO)

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We demonstrate polarization stable wafer fused VCSELs operating at 1320nm wavelength showing record high single mode power of 5.4 and 3.1 mW, at 25°and 75°C, respectively, and open eye diagrams with 40 ps fall time at 10Gb/s modulation. OCIS code 250.7260 Simultaneous demonstration of high-temperature, high-speed, and high-power fundamental mode lasing is the wellknown challenge with long-wavelength vertical cavity surface emitting lasers (VCSELs). Single-mode power and temperature operation range have been gradually increased as a result of substantial efforts in long-wavelength VCSEL research 1-9 . So far, the best results have been demonstrated using wafer fusion to bond one or more epitaxially grown AlGaAs/GaAs distributed Bragg reflector (DBR) stacks to the active region, which provides both thermal and optical optimum design of the VCSEL mirrors.Here we report on the performance of wafer fused VCSELs with an optimized spectral offset between the gain peak and the cavity mode. The VCSEL wafers were fabricated using a 2 inch wafer fusion process 6,8 . The device structure is practically the same as for previously reported wafer fused 1300 and 1550 nm VCSELs 3,4,6,8 .First, an InP-based active cavity wafer with InAlGaAs quantum wells (QWs) and a tunnel junction structure, as well as AlGaAs/GaAs top and bottom DBR wafers, were grown by metalorganic chemical vapour deposition (MOCVD).Patterning of the surface of the active cavity wafer, performed before the first fusion process, yielded mesa structures that served for self-aligned current and optical confinement regions. Wafer fusion was then performed to assemble the VCSEL wafer. Conventional processing was implemented for defining VCSEL devices with an optical aperture of 7μm. Both on-wafer testing as well as characterization of packaged devices was carried out. Figure 1 shows the light-current and voltagecurrent characteristics of one of the best devices, measured at different heat sink temperatures. Single mode, polarization stable output power as high as 5.4 mW and 3.1 mW were achieved at 25 and 75°C, respectively. The average threshold current for the VCSELs characterized was 2.95 and 3.72mA at 25 and 75°C, respectively; the a2300_1.pdf CTuGG2.pdf ©OSA 1-55752-834-9

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confidence: 99%

High power single mode VCSELs emitting at 1320nm wavelength

Iakovlev¹,

Mircéa²,

Mereuta³

et al. 2007

2007 Conference on Lasers and Electro-Optics (CLEO)

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“…[9][10][11] Among these approaches, the InP-based hybrid-type structures with binary distributed Bragg reflector (DBR) or dielectric-based DBR mirrors have provided high light output power and high temperature operation. Recently, these structures have also proposed LW-VCSELs based CWDM schemes.…”

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confidence: 99%

“…For the development of LW-VCSELs, many research groups have proposed GaAs-based, 1,2) InP-based monolithic structures, [3][4][5][6][7][8] and InP-based hybrid-type structures. [9][10][11] Among these approaches, the InP-based hybrid-type structures with binary distributed Bragg reflector (DBR) or dielectric-based DBR mirrors have provided high light output power and high temperature operation. Recently, these structures have also proposed LW-VCSELs based CWDM schemes.…”

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confidence: 99%

All-Monolithic 1.55 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

Park

Kwon

Han

et al. 2005

Jpn. J. Appl. Phys.

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We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 mm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppression ratio (SMSR) of 60 dB, divergence angle of 8 , the slope efficiency of 0.27 W/A, and the continuous wave (CW) operation of temperature over 80 C. We achieved the modulation bandwidth exceeding 2.5 Gbps and power penalty free transmission over 30 km.

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“…All these features hold for 1.3 mm VCSELs and make them useful for the applications of optical fibre communication systems including coarse wavelength division multiplexing and the metro and access networks. Accordingly, many research groups have proposed GaAsbased, 1,2) InP-based, [3][4][5] and hybrid-type structures 6,7) for the development of 1.3 mm VCSELs. Among these approaches, the hybrid-type structures 6,7) involving InP-based active materials combined with binary distributed Bragg reflectors (DBRs) or dielectric-based DBR mirrors of the large thermal conductivity and high reflectivity have provided high light output power and high temperature operation.…”

mentioning

confidence: 99%

“…Accordingly, many research groups have proposed GaAsbased, 1,2) InP-based, [3][4][5] and hybrid-type structures 6,7) for the development of 1.3 mm VCSELs. Among these approaches, the hybrid-type structures 6,7) involving InP-based active materials combined with binary distributed Bragg reflectors (DBRs) or dielectric-based DBR mirrors of the large thermal conductivity and high reflectivity have provided high light output power and high temperature operation. However, these approaches need two or more complicated processes and lead to an increase in the manufacturing cost and a decrease in the reliability.…”

mentioning

confidence: 99%

1.1 mW Single-Mode Output Power of All-Monolithic 1.3 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

Park

Kwon

Yoo³

et al. 2004

Jpn. J. Appl. Phys.

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We present all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) emitting wavelength of 1.3 µm grown by metal organic chemical vapor deposition (MOCVD). The devices with tunnel junction (TJ) and the air-gap aperture showed the performances as high as output power of 1.1 mW and as low as threshold current of 1.9 mA operating in single-mode at room temperature. We obtained the emitting transverse wavelength of 1333.1 nm with side mode suppression ratio (SMSR) of 40 dB, the continuous wave (CW) operation of temperature over 80°C, and modulation bandwidth exceeding 2.5 Gbit/s.

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1550 nm-band VCSEL 0.76 mW singlemode output power in 20–80°C temperature range

Cited by 16 publications

References 8 publications

High power single mode VCSELs emitting at 1320nm wavelength

High power single mode VCSELs emitting at 1320nm wavelength

All-Monolithic 1.55 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

1.1 mW Single-Mode Output Power of All-Monolithic 1.3 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

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