2013
DOI: 10.1016/j.mee.2013.02.082
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15days electron beam exposure for manufacturing of large area silicon based NIL master

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Cited by 3 publications
(3 citation statements)
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“…In case of small (and potentially repetitive) complex exposure geometries, also the approximation of the desired shapes by the rectangular or triangular imposes a substantial amount of exposure shots and consequently, a long exposure time, which can be of unrealistic extent. Aside of the related cost of such an exposure also the stability of the overall process becomes a challenge [12]. The way towards an even higher throughput in such a situation is the use of the CP writing mode, in which a complex exposure geometry is hard coded in a so-called mini reticle.…”
Section: Efficient E-beam Lithography For Nano-optical Structuresmentioning
confidence: 99%
“…In case of small (and potentially repetitive) complex exposure geometries, also the approximation of the desired shapes by the rectangular or triangular imposes a substantial amount of exposure shots and consequently, a long exposure time, which can be of unrealistic extent. Aside of the related cost of such an exposure also the stability of the overall process becomes a challenge [12]. The way towards an even higher throughput in such a situation is the use of the CP writing mode, in which a complex exposure geometry is hard coded in a so-called mini reticle.…”
Section: Efficient E-beam Lithography For Nano-optical Structuresmentioning
confidence: 99%
“…In the case of small (and potentially repetitive) complex exposure geometries, the approximation of the desired shapes by the rectangular or triangular imposes a substantial amount of exposure shots and, consequently, a long exposure time, which can be of unrealistic extent. In addition to the related cost of such an exposure, the stability of the overall process becomes a challenge 12 . The way toward an even higher throughput in such a situation is the use of the CP writing mode, in which a complex exposure geometry is hard coded in a so-called mini-reticle.…”
Section: Efficient E-beam Lithography For Nano-optical Structuresmentioning
confidence: 99%
“…In addition to the related cost of such an exposure, the stability of the overall process becomes a challenge. 12 The way toward an even higher throughput in such a situation is the use of the CP writing mode, in which a complex exposure geometry is hard coded in a so-called mini-reticle. In the case of the SB350 OS e-beam writer, a complex pattern with a maximum 2 μm × 2 μm size can be exposed with a single-electron beam shot.…”
Section: Introductionmentioning
confidence: 99%