180-nm mask fabrication process using ZEP 7000, multipass gray, GHOST, and dry etch for MEBES 5000

Lu, Maiying; Coleman, Thomas P.; Sauer, Charles A.

doi:10.1117/12.332814

Cited by 12 publications

(2 citation statements)

References 1 publication

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“…A typical value of y=3 for ZEP was chosen [9], as an exact value would depend on the development conditions. To determine values of k, the atomic composition of ZEP or ARCH1 was used in combination with data from Henke, et al [10].…”

Section: Resist Modelmentioning

confidence: 99%

Development of a technique for rapid at-wavelength inspection of EUV mask blanks

Spector¹,

Luo

Novembre³

et al. 1999

SPIE Proceedings

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We have dramatically increased the sensitivity of a technique for the rapid inspection of EUV multilayer-coated mask blanks. In this technique an EUV sensitive resist is applied directly to a mask blank which is then flood exposed with EUV light and partially developed. Reflectivity defects in the mask blank result in mounds in a partially developed positive resist that appear as high contrast objects in a standard Nomarski microscope. The use of a higher contrast resist is shown experimentally to result in the creation of dramatically taller mounds. A simple model for the exposure and development of the resist has been developed and the predictions of the model compare well with the experimental results.

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Section: Resist Modelmentioning

confidence: 99%

Development of a technique for rapid at-wavelength inspection of EUV mask blanks

Spector¹,

Luo

Novembre³

et al. 1999

SPIE Proceedings

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show abstract

“…PBS and EBR-9 have been replaced with other higher contrast resists and processes, primarily the Nippon Zeon line of materials, such as ZEP 520, ZEP 820 and most recently ZEP 7000. 1 One potential drawback to this type of chain scission resist (co-polymer of chlorostyrene and acrylate) is the need for organic solvent developers. Spin spray and puddle developing with volatile solvents is a challenge.…”

Section: Introductionmentioning

confidence: 99%

Modeling of acid catalyzed resists with electron beam exposure

et al. 2002

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The aggressive scaling in critical dimensions, coupled with the increasing use of subresolution features in optical proximity correction (OPC), dictates that maskwriters should have at their disposal electron beam resists capable of printing 100-nm OPC features on 280-nm design rule masks (70-nm features on the wafer). There is a need to survey commercial chemically amplified resists for use as mask making resists, and for completeness, such a survey would require that each resist be compared with an optimized resist process. To accomplish this task in a acceptable time period we have chosen to perform electron beam lithography modeling to quickly identify the resist process combinations that will lead to superior resist performance. We have used the technique of combining electron beam resist modeling with lithography to screen chemically amplified resists for use in electron beam mask making. This was accomplished by comparing experimentally determined resist sensitivities and profiles with those predicted from ProBeam /3D lithography modeling software.

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Cr absorber etch process for extreme ultraviolet lithography mask fabrication

Smith

Wasson

Mangat

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inFocused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair Thermal modeling of extreme ultraviolet and step and flash imprint lithography substrates during dry etch Reactive ion etching ͑RIE͒ and inductively coupled plasma ͑ICP͒ Cr etch processes have been evaluated for fabrication of extreme ultraviolet lithography masks on 200 mm substrates. Experiments were completed to optimize the Cr etch rate, etch rate uniformity, and Cr to resist selectivity for both etch processes. The best ICP process was found to have superior etch rate, etch rate uniformity, and comparable Cr to resist selectivity to the RIE process. The effect of exposed Cr area on the Cr to resist selectivity, critical dimension ͑CD͒ bias, and CD bias 3 was also investigated. A decrease in exposed Cr area from 95% to 7% was found to dramatically increase the Cr etch rate, leading to an increase in the Cr to resist selectivity. Lower Cr loading was also found to decrease the CD bias and CD bias 3. The average CD bias was very high for both processes, with the ICP etch process having a higher CD bias ͑143 nm͒ than the RIE process ͑89 nm͒. The CD bias uniformity was significantly lower for the ICP process ͑32 nm, 3͒ when compared to the RIE process ͑71 nm, 3͒.

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180-nm mask fabrication process using ZEP 7000, multipass gray, GHOST, and dry etch for MEBES 5000

Cited by 12 publications

References 1 publication

Development of a technique for rapid at-wavelength inspection of EUV mask blanks

Development of a technique for rapid at-wavelength inspection of EUV mask blanks

Modeling of acid catalyzed resists with electron beam exposure

Cr absorber etch process for extreme ultraviolet lithography mask fabrication

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