18nm FDSOI Technology Platform embedding PCM &amp; Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU Applications

Min, Doohong; Park, Jinha; Weber, O.; Wacquant, F.; Villaret, A.; Vandenbossche, Eric; Arnaud, F.; Bernard, E.; Elghouli, Salim; Boccaccio, C.; Favennec, L.; Gonella, R.; Galvier, J.; Yun, Jiyoung; Park, Jin-Woo; Lee, Minuk; Yoon, Pyeongjun; Lee, Ilmin; Seo, Heaseok; Choi, Hyo Geun; Oh, Chang-Bong; Kang, Jinseok; Park, Sewan; Lee, Hyun-Jong; Choi, Youngju; Kim, Inwhan; Jo, Joohyun; Park, Yoon Soo; Park, Jinchan; Lee, Young-Ja; Jung, Jinhyeok; Lee, Juwon; Jang, Ha-Na; Kang, Ji-Hun; Kwon, Ji‐Soo; Kim, Joochan; Maeda, S.; Hong, Young Ki

doi:10.1109/iedm19574.2021.9720542

Cited by 14 publications

(1 citation statement)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first requirement was achieved in PCM by material engineering, thanks to the introduction of Ge-rich GeSbTe (GGST) chalcogenide alloys, which provide great retention capability of more than 10 years at 185 • C [1]. Thanks to this breakthrough, PCM became a suitable candidate, introduced in advanced CMOS technology nodes such as 28 nm and even 18 nm [2]. The programming current reduction to target portable and low power applications remains an important goal to reach and the main development axes are scaling [3,4], material engineering [5], and thermal optimization [6].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction

Camaret

Bourgeois

Cueto

et al. 2022

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)

View full text Add to dashboard Cite

In this work, we present the extensive electrical characterization of 4kb Phase-Change Memory (PCM) arrays based on "Wall" structure and Ge-rich GeSbTe (GST) material, integrating a SiC dielectric with low thermal conductivity surrounding the heater element for enhanced cell thermal efficiency. We investigate the effects of the introduction of such dielectrics on the electrical performances of the device and we provide a promising path to achieve energy-efficient PCM cells supporting our results by electro-thermal TCAD simulations.

show abstract

Section: Introductionmentioning

confidence: 99%

Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction

Camaret

Bourgeois

Cueto

et al. 2022

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)

View full text Add to dashboard Cite

show abstract

In-memory computing with emerging memory devices: Status and outlook

Mannocci

Farronato

Lepri

et al. 2023

APL Machine Learning

View full text Add to dashboard Cite

In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or suppress the memory bottleneck, which is the major concern for energy efficiency and latency in modern digital computing. While the IMC concept is simple and promising, the details of its implementation cover a broad range of problems and solutions, including various memory technologies, circuit topologies, and programming/processing algorithms. This Perspective aims at providing an orientation map across the wide topic of IMC. First, the memory technologies will be presented, including both conventional complementary metal-oxide-semiconductor-based and emerging resistive/memristive devices. Then, circuit architectures will be considered, describing their aim and application. Circuits include both popular crosspoint arrays and other more advanced structures, such as closed-loop memory arrays and ternary content-addressable memory. The same circuit might serve completely different applications, e.g., a crosspoint array can be used for accelerating matrix-vector multiplication for forward propagation in a neural network and outer product for backpropagation training. The different algorithms and memory properties to enable such diversification of circuit functions will be discussed. Finally, the main challenges and opportunities for IMC will be presented.

show abstract