190-GHz f/sub T/, 130-GHz f/sub max/ SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

Kiyota, Yukihiro; Hashimoto, Takashi; Udo, Tsutomu; Kodama, A.; Shimamoto, H.; Hayami, R.; Washio, Katsuyoshi

doi:10.1109/bipol.2002.1042904

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…The pinched base sheet resistance pebs and rbb' are low due to less boron diffusion by the effect of C doping, and they are about half of those that are fabricated without C doping [ 5 ] . For the 2.5nm WB HBT which has a highfhfAx value of 204 GHz, they are 1.1 kR/sq.…”

Section: Resultsmentioning

confidence: 99%

“…In order to fabricate an extremely thin base region scaled down toward the thickness of 1 nm, we have optimized SiGe epitaxial growth process conditions and improved the local thickness uniformity of the epi-layer near the intrinsic base and the base electrode contact cavity. Also, we applied a HC1-free selective epitaxial growth method to achieve high B concentration without effecting growth surface roughening [5,7].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, B profile and its peak concentration are relatively maintained after device fabrication when compared to fabrication without C doping. This thin and heavily doped base layer was selectively grown using a conventional single-wafer type LPCVD in view of mass-production [4,5,6,7]. In order to fabricate an extremely thin base region scaled down toward the thickness of 1 nm, we have optimized SiGe epitaxial growth process conditions and improved the local thickness uniformity of the epi-layer near the intrinsic base and the base electrode contact cavity.…”

Section: Introductionmentioning

confidence: 99%

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Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

Tominari

Wada

Tokunaga

et al. 2003

Proceedings of the 2003 Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat No 03CH37440) BIPOL-03

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A thin and heavily-boron-doped SiGe:C base was selectively grown by Low Pressure Chemical Vapor Deposition (LPCVD). To achieve high-speed performance, we performed carbon doping in the base region and studied as-grown intrinsic base width scaled-down toward a thickness of 1 nm with high SiGe-epi process stability and high transistor yield. We achieved fTJ,,M of 170/204 GHz, an ECL gate delay of 4.8 ps, and a 57 GHz maximum clock frequency of 16: 1 MUX in this HBT.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

Tominari

Wada

Tokunaga

et al. 2003

Proceedings of the 2003 Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat No 03CH37440) BIPOL-03

View full text Add to dashboard Cite

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“…heterojunction bipolar transistors (HBT) [1,2] and metal-oxide-semiconductor-field-effect-transistors (MOSFET) [3,4] due to the possibility of having band gap engineering and improvement in thermal stability. Both selective or non-selective epitaxy have been applied in these applications.…”

Section: Introductionmentioning

confidence: 99%