Tin halide perovskites (THPs) have appealing optoelectronic
properties
similar to lead halide perovskites (LHPs). However, THPs coated on
metal oxide electrodes in normal-structure perovskite solar cells
exhibit poor diode rectification, resulting in poor efficiency. This
poor photoelectric performance in n–i–p-based THP solar
cells is in contrast with LHP solar cells. We report that this deficient
performance of THP solar cells is triggered by the defect states of
the metal oxide layer. The defect states of the metal oxide can trap
the electrons from the THP, leading to the prompt formation of Sn(IV),
which will increase the carrier density and lead to poor photoelectric
performance. This observation was supported by the ultraviolet-photoelectron
spectroscopic measurements of inorganic thin films Al2O3, SnO2, TiO2, ZnO, and ZrO2. However, this self-doping phenomenon resulting in the increase
in carrier density can be applied to thermoelectric studies. Using
CsSnI3/ZrO2 nanocomposites as thermoelectric
active layers, we report a power factor of 186.58 μW/mK2 measured at room temperature, which is better than the 148.61
μW/mK2 of the original CsSnI3 thin film.