2.8-GB/s-write and 670-MB/s-erase operations of a 3D vertical chain-cell-type phase-change-memory array

Kurotsuchi, Kenzo; Sasago, Y.; Yoshitake, Hiroshi; Minemura, Hiroyuki; Anzai, Yumiko; Fujisaki, Yasumasa; Takahama, T.; Takahashi, Tsuyoshi; Mine, T.; Shima, Akio; Fujisaki, Koji; Kobayashi, Takashi

doi:10.1109/vlsit.2015.7223705

Cited by 12 publications

(6 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Phase‐change random access memory (PCRAM) offers low power consumption, fast switching speeds, and excellent scalability . Recently, it was shown that the switching properties of Ge–Sb–Te based materials used in PCRAM can be further improved by arranging the pseudobinary components Ge–Te and Sb–Te into a superlattice (SL) structure, leading to a significant decrease in switching power consumption .…”

mentioning

confidence: 99%

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

Mitrofanov

Saito

Miyata

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Ge–Sb–Te alloy based phase‐change memory devices have recently been shown to be switchable in a bipolar mode. However, to date bipolar switching has only been demonstrated at relatively low speeds (on the order of tens of µs), and with endurance limited to 104 switching cycles. In this work, in lieu of a Ge–Sb–Te alloy, fast and durable bipolar switching is demonstrated in interfacial phase change memory (iPCM). It is revealed that in iPCM devices, bipolar switching can be carried out at least a factor of 1000 times faster and with at least 1000 times greater endurance than in conventional Ge–Sb–Te alloy based phase‐change devices. Additionally, bipolar switching was found to exhibit a larger RESET to SET resistance ratio and lower power consumption compared to conventional Ge–Sb–Te alloy based devices.

show abstract

mentioning

confidence: 99%

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

Mitrofanov

Saito

Miyata

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…Promising speed and reliability features could be obtained although no demonstration on larger densities has been provided so far. Finally, a high-programming-throughput 3D vertical chain-cell-type phase-change memory (VCCPCM) array was shown in [76]. This device inherits the same architecture of 3D NAND Flash where the PCM cell element is coupled with a MOSFET selector during the integration (see Fig.…”

Section: B Performance and Reliabilitymentioning

confidence: 99%

“…Fig.12. Cross-sectional view of VCCPCM array and equivalent circuit of memory chain (reproduced with permission from[76]). …”

mentioning

confidence: 99%

Phase Change and Magnetic Memories for Solid-State Drive Applications

et al. 2017

View full text Add to dashboard Cite

The state-of-the-art solid-state drives (SSDs) now heterogeneously integrate nand Flash and dynamic random access memories (DRAMs) to partially hide the limitation of the nonvolatile memory technology. However, due to the increased request for storage density coupled with performance that positions the storage tier closer to the latency of the processing elements, nand Flash are becoming a serious bottleneck. DRAM as well are a limitation in the SSD reliability due to their vulnerability to the power loss events. Several emerging memory technologies are candidate to replace them, namely the storage class memories. Phase change memories and magnetic memories fall into this category. In this work, we review both technologies from the perspective of their possible application in future disk drives, opening up new computation paradigms as well as improving the storage characteristics in terms of latency and reliability

show abstract

“…The other is the growing number of lithography steps with the increasing n , which increases the fabrication cost significantly. A vertical thin-film transistor-phase-change memory, called “V-TFT-PcRAM”, could be conceived to overcome those issues. − Similar to the vertical NAND flash, in which the memory elements (charge trap layer) and selector device (transistor) are connected in parallel, the suggested structure does not involve the issues mentioned above, making it more appealing than the Optane-type structure. Nonetheless, many issues still must be addressed, as discussed in this work.…”

Section: Introductionmentioning

confidence: 99%

Parallel Integration of Nanoscale Atomic Layer Deposited Ge₂Sb₂Te₅ Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

Choi

Kim

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Parallel thin-film transistor-phase-change memory (TFT-PcRAM) is a next-generation large-capacity nonvolatile memory with a vertically integrated structure. Planar In-Ga-Zn-O (IGZO)-TFT and nanoscale PcRAM were fabricated and analyzed as active selectors and resistance-switching memory in this work. After confirming their compatibility, Ge 2 Sb 2 Te 5 (GST225) film by atomic layer deposition was combined with the IGZO-TFT to fabricate a 1 transistor-1 PcRAM parallel circuit. A direct current− voltage sweep and transfer behavior showed that the parallel IGZO-TFT/GST225-PcRAM performed depending on the gate voltage. The specific device behavior could be quantitatively understood from the parallel circuit structure. The cross-section transmission electron microscopy along the lateral and perpendicular directions indicated the localized amorphous region, confirming the phase-change mechanism. Finally, a string number simulation was performed to identify the array operation based on the single-device data. These results demonstrate the availability of parallel IGZO-TFT/GST225-PcRAM as the next-generation nonvolatile memory.

show abstract

2.8-GB/s-write and 670-MB/s-erase operations of a 3D vertical chain-cell-type phase-change-memory array

Cited by 12 publications

References 0 publications

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

Phase Change and Magnetic Memories for Solid-State Drive Applications

Parallel Integration of Nanoscale Atomic Layer Deposited Ge₂Sb₂Te₅ Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

Contact Info

Product

Resources

About

2.8-GB/s-write and 670-MB/s-erase operations of a 3D vertical chain-cell-type phase-change-memory array

Cited by 12 publications

References 0 publications

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

Phase Change and Magnetic Memories for Solid-State Drive Applications

Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

Contact Info

Product

Resources

About

Parallel Integration of Nanoscale Atomic Layer Deposited Ge₂Sb₂Te₅ Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor