We demonstrated the operation of phase-change memory cells that enabled 1.

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A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., current and voltage) for the cell is significantly reduced by inserting a very thin Ta 2 O 5 film between GeSbTe (GST) and a W plug. The Ta 2 O 5 interfacial layer works not only as a heat insulator enabling effective heat generation in GST but also as an adhesion layer between GST and SiO 2 underneath. Nonetheless, sufficient current flows through the interfacial layer due to direct tunneling. A low programming power of 1.5 V/100 µA can therefore be obtained even on a W plug with a diameter of 180 nm fabricated using standard 0.13-µm CMOS technology. In addition, the uniformity and repeatability of cell resistance are excellent because of the inherently stable Ta 2 O 5 film properties.

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