2 and 4-bit DC-18 GHz microstrip MEMS distributed phase shifters

Hayden, Joseph S.; Malczewski, A.; Kleber, J.; Goldsmith, C. Franklin; Rebeiz, Gabriel M.

doi:10.1109/mwsym.2001.966875

Cited by 39 publications

(20 citation statements)

References 4 publications

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“…Designing a DMTL phase shifter [10]- [12] consists in placing periodically elementary phase shifting cells, like unit cells tested above, along a transmission line. Each one is equivalent to a switched capacitor modifying loaded impedance of the line and resulting a phase shift given by (1).…”

Section: A Design Principlesmentioning

confidence: 99%

Ku band DMTL medium power phase shifters

Maury

Pothier

Orlianges

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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-The first part of this paper deals with curled shunt capacitive MEMS switched varactors with good power handling capabilities. These devices have been able to achieve 1 billion cycles under 5 W in hot switching conditions. These cantilevers have been used as switched capacitors periodically loaded along a Coplanar Wave Guide (CPW) line to form a Distributed MEMS Transmission Line (DMTL) phase shifter. In the second part, the integration of these beams in 90° and 180° DMTL sections operating at 15 GHz is shown. For these respective configurations, phase shifts of 89.3° and 178° have been observed and validate this conception. With reasonable loss of 60°/dB, these devices are among the first MEMS based phase shifter in literature able to operate at such power level in hot switching conditions.

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Section: A Design Principlesmentioning

confidence: 99%

Ku band DMTL medium power phase shifters

Maury

Pothier

Orlianges

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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“…RF MEMS switches are widely applied in RF subsystem circuits, such as antennas, tunable filters, phase shifters, and impedance tuners [1][2][3][4][5][6][7], due to their low insertion loss, large isolation, good linearity, and very low power requirements. All of these systems consist of several or even more than ten switches, e.g., 8 switches in reconfigurable matching network [4], 4×4 and 8×8 switches networks for antenna applications [5], 4×4 switches in 4-bit digital tunable filter [6], and a 90 • section with 8 switches and a 180 • section with 16 switches in 2-bit distributed phase shifter [7].…”

Section: Introductionmentioning

confidence: 99%

Comparison of the RF MEMS switches with dielectric layers on the bridge’s lower surface and on the transmission line

Chen

Zhang

2011

Sci. China Inf. Sci.

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Previously, we proposed that the dielectric layer of RF MEMS switch can be fabricated either on the transmission line, as traditional switches, or on the lower surface of the bridge. This paper presents a detailed comparison of the RF MEMS switches with different positions of dielectric layer. Through theoretically analyzing the physical model of fringing capacitance, it is revealed that different positions of dielectric layer can result in different switch capacitances. Therefore, the change of dielectric-layer position can reduce the switch capacitance and insertion loss when the bridge is much wider than t-line. The theoretical analysis is demonstrated by Maxwell 3D and HFSS simulation, showing that the insertion loss is reduced by around 13% when the bridge width is three times of transmission line width. Further, the influence of switch's structural parameters, such as dielectric material and dimensions of dielectric layer, on the differences between these two kinds of switches is discussed. To achieve high integration together with low-loss and low-actuation-voltage design, the novel switch with dielectric layer on bridge's lower surface can be expected to have broad applications in the future. CitationChen K L, Zhang J W. Comparison of the RF MEMS switches with dielectric layers on the bridge's lower surface and on the transmission line.

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“…However, since there was a limit on the control range of the bridge height before the bridge snaps, the analog phase shifter showed relatively small phase shift. This problem was solved by operating the MEMS bridges in the digital mode [4][5][6][7][8][9][10][11], where two distinct capacitance states (ON and OFF) were defined with a high ratio. Digital phase shifters with this approach allow large phase shift and low sensitivity to electrical noise.…”

Section: Introductionmentioning

confidence: 99%

Small Size Ka-Band Distributed Mems Phase Shifters Using Inductors

Afrang¹,

Majlis²

2008

PIER B

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Abstract-MEMS phase shifter has been developed using inductors. The design consists of a CPW line capacitively and inductively loaded by the periodic set of inductors and electrostatic force actuated MEMS switches as capacitors. By applying a single bias voltage on the line, the characteristic impedance can be changed, which in turn changes the phase velocity of the line and creates a true time delay phase shift. The governing equations for the impedance and loss are derived. The ABCD matrix is defined for a unit cell and multi-cell DMTL phase shifter to extract scattering parameters equations. The MEMS switch is actuated by a 39 voltage waveform using a high resistance bias line. Estimated spring constant and switching time is 22 N/m and 3 µs, respectively. The structure is designed for Ka-band frequency range. The acceptable frequency range for the design containing 21 cells is between 26 GHz and 27 GHz and optimum condition occurs at 26.3 GHz. For the whole structure and optimum condition the un actuated position results in a return loss −16 dB and insertion loss of −1.65 dB. The actuated position results in a return loss −12.5 dB and insertion loss of −1.6 dB. The phase shift for the whole structure is 190 degree. The optimum condition can be easily changed by modifying the design parameters. The spacing in the proposed structures is S = 250 µm. The structure is also low loss. The length and the loss per bit with the phase shift of 270 • are decreased by 37.5 percent and 21 percent respectively.

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2 and 4-bit DC-18 GHz microstrip MEMS distributed phase shifters

Cited by 39 publications

References 4 publications

Ku band DMTL medium power phase shifters

Ku band DMTL medium power phase shifters

Comparison of the RF MEMS switches with dielectric layers on the bridge’s lower surface and on the transmission line

Small Size Ka-Band Distributed Mems Phase Shifters Using Inductors

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