2-D dopant profiling in VLSI devices using dopant-selective etching: an atomic force microscopy study

Barrett, Monica; Dennis, M.; Tiffin, D.; Li, Y.; Shih, Chih‐Kang

doi:10.1109/55.363243

Cited by 23 publications

(12 citation statements)

References 11 publications

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“…The preferential etch induces a concentration dependent topography which can be observed either using TEM or AFM. The use of AFM imaging originated from the idea to determine the topography in a quantitative manner as one then could convert the topography to concentration levels by the use of appropriate calibration curves [74]. Despite several attempts and the use of more controlled etching procedures (such as the etching within an electrolytical cell [75]) the latter concept has not materialized to a routine technique as the etching turns out to be fairly irreproducible.…”

Section: D-carrier Profilingmentioning

confidence: 99%

One- and two-dimensional dopant/carrier profiling for ULSI

Vandervorst¹,

Clarysse²,

Wolf³

et al. 1998

The 1998 International Conference on Characterization and Metrology for ULSI Technology

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Section: D-carrier Profilingmentioning

confidence: 99%

One- and two-dimensional dopant/carrier profiling for ULSI

Vandervorst¹,

Clarysse²,

Wolf³

et al. 1998

The 1998 International Conference on Characterization and Metrology for ULSI Technology

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“…Most of the etch procedures reported so far in literature [4][5][6][7][8] are based on the system HNO 3 /HF/H 2 O. It is fast, it is process compatible, and it has been extensively studied and used before.…”

Section: B Classical Approachmentioning

confidence: 99%

Two-dimensional profiling in silicon using conventional and electrochemical selective etching

Trenkler

Vandervorst

Hellemans

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inTwo-dimensional dopant concentration profiles from ultrashallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method One of the methods to delineate a two-dimensional dopant profile in Si devices is the selective etching technique combined with imaging of the doping dependent topography by atomic force microscopy. A major problem of the etching procedures reported so far is the critical control of the etch duration of only a few seconds as well as a limited sensitivity and dynamic range. We report further improvements of the conventional technique and compare it to an alternative approach. Etching experiments were carried out in an electrolytic cell, whereby the etching is controlled potentiostatically. Better control of the dissolved volume is achieved through current integration. Buffered HF as the electrolyte replaces the difficult nitrogen related chemistry of the classical approach. The etch rates thereby decrease by a factor of 10-100 thus allowing for a longer etch duration. The basic mechanisms, the sensitivity, and the dynamic range of the two techniques have been studied by using homogeneous samples and special test structures for calibration and ultrashallow profiling. Two-dimensional profiling has been carried out on cross sections of 0.25 m complementary metal-oxide-semiconductor devices with the classical and the electrochemical approaches. Problems of preparation, etching procedure, and imaging techniques are discussed in order to improve the quantification of the selective etching technique.

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“…17,18 This is an extension of the previous method for 17 A review of recent advances in the differential etching area can be found in these proceedings. 17,18 This is an extension of the previous method for 17 A review of recent advances in the differential etching area can be found in these proceedings.…”

Section: Dopant Profiling By Afm Characterization Of Etched Strumentioning

confidence: 99%

Characterization of two-dimensional dopant profiles: Status and review

Diebold¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The National Technology Roadmap for Semiconductors calls for development of two-and three-dimensional dopant profiling methods for calibration of technology computer-aided design process simulators. We have previously reviewed 2D dopant profiling methods. In this article, we briefly review methods used to characterize etched transistor cross sections by expanding our previous discussion of scanned probe microscopy methods. We also mention the need to participate in our ongoing comparison of analysis results for test structures that we have provided the community.

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2-D dopant profiling in VLSI devices using dopant-selective etching: an atomic force microscopy study

Cited by 23 publications

References 11 publications

One- and two-dimensional dopant/carrier profiling for ULSI

One- and two-dimensional dopant/carrier profiling for ULSI

Two-dimensional profiling in silicon using conventional and electrochemical selective etching

Characterization of two-dimensional dopant profiles: Status and review

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