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Masks for electron projection lithography ͑EPL͒ require the use of thin membranes for either stencil or all membrane scattering masks. The processes of forming the printable patterns before or after the membrane etch step are compared for EPL stencil masks. Image size uniformity and image placement distortions are characterized and indicate, with appropriate process optimization, either process flow is viable for EPL mask manufacture. Image size uniformity within individual membranes has achieved Ͻ10 nm ͑3͒ with the membrane flow process, and the magnitude of process induced image placement distortions is similar for both process flows. Stencil masks have also been fabricated with support rings. The masks with support rings show more repeatable absolute image placement, but the image placement distortion due to patterning is nearly identical for masks with or without a support ring.

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