1997
DOI: 10.1109/4.568826
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2-V/100-ns 1T/1C nonvolatile ferroelectric memory architecture with bitline-driven read scheme and nonrelaxation reference cell

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Cited by 14 publications
(7 citation statements)
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“…Fig . 5 shows typical simulation results where and rise according to (1) and (2). This simulation is based on a bitline with 256 cells fF and a 1-m ferroelectric cell capacitor ( fF and fF).…”
Section: Dcrs Primermentioning
confidence: 99%
See 1 more Smart Citation
“…Fig . 5 shows typical simulation results where and rise according to (1) and (2). This simulation is based on a bitline with 256 cells fF and a 1-m ferroelectric cell capacitor ( fF and fF).…”
Section: Dcrs Primermentioning
confidence: 99%
“…1 compares the typical read access time of a 512 64, two-transistor two-capacitor (2T-2C) FeRAM using four different read schemes. Among the four, the conventional [1], the bitline driven [2], and the nondriven plateline [3] read schemes utilize the charge difference between a ferroelectric capacitor storing a "1" and a "0" as shown in Fig. 2, to detect the data stored in a cell.…”
Section: Introductionmentioning
confidence: 99%
“…Also, by tying the PL to 2, it requires regular refreshing of the storage nodes to 2. Hirano et al [28], [29] proposed a different read scheme in a similar architecture that ties the PL to ground, instead of 2, and precharges (drives) the BL to prior to activating the WL. This allows a full to develop across the FE capacitor for the read operation.…”
Section: F Bitline-driven Architecturementioning
confidence: 99%
“…The segmented-PL architecture, explained earlier in this paper, can be combined with the bitline-driven architecture to further reduce the cycle time and the access time [28], [29].…”
Section: F Bitline-driven Architecturementioning
confidence: 99%
“…Ferroelectric random access memory (FeRAM) has great potential to meet both performance and power requirements. Among previous schemes [1][2][3][4][5], a nondriven plateline scheme [3] and bitline-driven scheme [4] seem to be suitable for highspeed applications. However, the nondriven plateline scheme needs the refreshing operation to maintain the nonvolatile characteristic and limits the voltage available for switching the ferroelectric capacitor, while the bitline-driven scheme still needs a moving plateline and does not reduce the cycle time.…”
mentioning
confidence: 99%