2004
DOI: 10.1109/jssc.2004.835813
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Circuit implementations of the differential capacitance read scheme (DCRS) for ferroelectric random-access memories (FeRAM)

Abstract: This paper presents two circuit implementations for the differential capacitance read scheme (DCRS) in ferroelectric random-access memories (FeRAM). Compared to the conventional read scheme, DCRS achieves a faster read access by activating the sense amplifiers immediately after a wordline is activated. By relying on the capacitance difference instead of the charge difference, DCRS avoids raising the highly capacitive platelines until after the read is complete. We have implemented this scheme in a 0.35-m CMOS+… Show more

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Cited by 6 publications
(2 citation statements)
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“…How large the sense margin could be depends on three important coefficients, ˛, ˇand , which are defined in Eqs. ( 1)- (3).…”
Section: Discussion and Comparisonmentioning
confidence: 99%
“…How large the sense margin could be depends on three important coefficients, ˛, ˇand , which are defined in Eqs. ( 1)- (3).…”
Section: Discussion and Comparisonmentioning
confidence: 99%
“…Among the nonvolatile memories, FeRAM is a better choice, because of its short write access time and low power and voltage write operation [13], which results in fast instantiation of the algorithm with minimum power. Differential capacitance read scheme (DCRS) [27] can be used for the FeRAM read operation to achieve short access time (less than 50 ns) that satisfies the available time budget for smart card applications ( ns approximately, which corresponds to MHz). The main disadvantage of FeRAM over other nonvolatile memories is its higher power consumption for read operation.…”
Section: A Architecturementioning
confidence: 99%