214-Gb/s 4-PAM Operation of Flip-Chip Interconnection EADFB Laser Module

Kanazawa, Shigeru; Yamazaki, Hiroshi; Nakanishi, Y.; Ueda, Yuta; Kobayashi, Wataru; Muramoto, Y.; Ishii, Hiroyuki; Sanjoh, Hiroaki

doi:10.1109/jlt.2016.2632164

Cited by 57 publications

(20 citation statements)

References 19 publications

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“…Besides, such modulators should be realized with a micrometer-scale footprint to still ensure a high degree of parallelization to increase the aggregate data rate of the module and to match with the dimensions of electronic driving circuitry [2]. To realize densely integrated transceivers a low power load is required [3], [4], which can be realized by modulators with low driving voltages and the avoidance of electrical 50 Ω terminated transmission lines [5], [6].…”

Section: Introductionmentioning

confidence: 99%

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Heni

Baeuerle

Mardoyan

et al. 2020

J. Lightwave Technol.

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We demonstrate a 222 GBd on-off-keying transmitter in a short-reach intra-datacenter scenario with direct detection after 120 m of standard single mode fiber. The system operates at net-data rates of >200 Gb/s OOK for transmission distances of a few meters, and >177 Gb/s over 120 m, limited by chromatic dispersion in the standard single mode fiber. The high symbol rate transmitter is enabled by a high-bandwidth plasmonic-organic hybrid Mach-Zehnder modulator on the silicon photonic platform that is ribbon-bonded to an InP DHBT 2:1 digital multiplexing selector. Requiring no driving RF amplifiers, the selector directly drives the modulator with a differential output voltage of 622 mV pp measured across a 50 Ω resistor. The transmitter assembly occupies a footprint of less than 1.5 mm × 2.1 mm.

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Section: Introductionmentioning

confidence: 99%

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Heni

Baeuerle

Mardoyan

et al. 2020

J. Lightwave Technol.

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“…Multiple laboratories have worked on more efficient assembly solutions, generally based on arrays of EMLs monolithically integrated on the same substrate, and on the use of flip-chip technology rather than soldering by the chip bottom side to improve HF performances [22], [23], [24].…”

Section: Emls In Subassembly and Further Developmentsmentioning

confidence: 99%

Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

Dai¹,

Debrégeas²,

Rold³

et al. 2021

IEEE J. Select. Topics Quantum Electron.

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This paper presents our technological approach for Externally Modulated Lasers (EMLs), based on Semi-Insulating Buried Heterostructure (SIBH) waveguide. We use Gas Source Molecular Beam Epitaxy (GSMBE) to grow the Phosphorusbased multi-quantum wells for both laser and modulator sections with butt-joint integration. The same GSMBE grows the p-doped InP claddings with low-diffusion Be dopant, leading to an accurate control of doping profiles, ensuring very steep modulator extinction curves. We present the main EML design rules and compromises, then apply them to different EMLs aiming at major telecom and datacom applications. After presenting characteristics of the standard 10 Gb/s C-band EML, we propose a 10 Gb/s EML at 1577 nm for next generation access networks, with a record high 10.5 dBm facet modulated power. Then we present high-speed EMLs up to 56 GBaud for datacenter interconnections, both in O-and C-band, aiming at very low peak-to-peak modulation voltage (< 1.2 V), high facet modulated power (> 4.4 dBm), and compatible with uncooled operation (20 to 70 °C). These results confirm the efficiency and versatility of this technological platform for EMLs in a broad range of applications.

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“…Due to the non‐linear EAM transfer function, the drive voltage for each of the quaternary PAM levels was set to a specific value through a 3‐bit digital‐to‐analogue converter (DAC), in order to avoid uneven eye openings that would result in large reception penalties. Higher data rates beyond 200 Gb/s/λ have been achieved by employing signal equalisation in the digital domain [11, 12] or probabilistic shaping in combination with 8‐level PAM [13].…”

Section: Applications As Optical Transmittermentioning

confidence: 99%

Electroabsorption‐modulated laser as optical transmitter and receiver: status and opportunities

Schrenk

2020

IET Optoelectronics

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214-Gb/s 4-PAM Operation of Flip-Chip Interconnection EADFB Laser Module

Cited by 57 publications

References 19 publications

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

Electroabsorption‐modulated laser as optical transmitter and receiver: status and opportunities

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