25.8Gbps direct modulation of BH AlGaInAs DFB lasers with p-InP substrate for low driving current

28 Gb/s direct modulation heterogeneously integrated C-band InP/SOI DFB laser

“…Using Al-containing quaternary materials in the active region, which have higher differential gain coefficient, could further improve the highspeed (as well as thermal) properties of the device. Further improvement in power consumption can be realized by shortening the laser cavity length [14,17], implementing a high reflectivity mirror on one side of the DFB laser and again by implementing passive III-V taper structures that don't need to be electrically pumped. These devices enable the realization of 4x28 GbE wavelength division multiplexed or parallel optics transceivers.…”

“…Direct modulation of laser diodes for high-speed transceivers has significant advantages over the use of external modulators in terms of power consumption, fabrication complexity and compactness [14][15][16][17][18], especially for short distance optical interconnects. As has been discussed in [1,2], MZ based modulators require a long interaction length (~mm's) if a low drive voltage is desired.…”

“…They also suffer from substantial insertion loss, which implies using a higher power laser source to compensate for the losses. High performance directly modulated lasers on an InP platform and bonded to a silicon substrate have been demonstrated recently [14][15][16]. Given the mentioned advantages of silicon photonics it would be desirable to have directly modulated transmitters with a high modulation bandwidth coupled to a silicon photonic integrated circuit.…”

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

“…Direct modulation of laser diodes for high-speed transceivers has significant advantages over the use of external modulators in terms of power consumption, fabrication complexity and compactness [21][22][23][24][25], especially for short distance optical interconnects. High-speed directly modulated lasers on the InP platform and bonded to a silicon substrate have been demonstrated recently [21][22][23]. Given the mentioned advantages of silicon photonics, it would be desirable to have directly modulated lasers with a high modulation bandwidth, heterogeneously integrated on and coupled to silicon PICs.…”

Electric characteristics of ruthenium doped InP and its application for buried‐heterostructure lasers

“…We have reported the AlGaInAs Buried-Heterostructure (BH) distribution feedback laser diode (DFB-LD) with semi-insulating Fe-doped InP as the current blocking layer [1]. However, Fe has strong interdiffusion with p-type dopants such as Zn in InP layers [2].…”