27.2: Invited Paper: Towards High Performance Gate Electrodes: Resistance Reduction in Molybdenum Films by Seed Layer Application

Abstract

Molybdenum gate line resistance is a critical item for future high end TFT devices. While conventional Molybdenum lines are well established, the application of better conducting materials poses new challenges to stability and process integration. In our work we investigate and discuss application of different seed layer materials to lower the line resistance of Molybdenum while keeping its superior processability. Our results show that the application of a thin seed layer below the Molybdenum layer can reduce resistance of main Molybdenum film by up to 30%.