Molybdenum (Mo) is commonly used for thin film transistor (TFT) metallization in displays. Apart from its outstanding electronic and adhesive properties in the metallic form, it also possesses stable oxidation states, including sub‐stoichiometric oxides. Depending on the amount of oxygen, the properties can be widely tuned and oxygen‐deficient MoO3‐y films can be electrical conducting and optically absorbing, making them suitable candidates for integration as low‐reflection coatings for on/in cell touch, black matrix on array, narrow bezel, or TFT metallization. Deposition of these oxides by fully reactive sputtering from metal targets implies several problems such as lateral inhomogeneities on large substrates (>G5) and difficult control of oxygen flow. To avoid these obstacles, DC‐ sputtering from ceramic Molybdenum oxide targets without the addition of oxygen gas is proposed.In our work, we show the non‐reactive DC‐sputtering of MoOx:TaOx in a stable and reliable process with deposition rates of up to 180 nm/min. Further on, the electrical, optical, and structural properties of the resulting films are studied. The reflectance of light from external sources and the resulting color impression of the dark layer coatings is investigated on different substrates. The color coordinates of the film can be tuned by the layer thickness, the type of covered metal layer (e.g. Cu, Al, Mo), as well as composition of the oxide. From a process stability point of view, we discuss changes during additional annealing steps, and show structural changes at elevated temperatures.

Metal‐oxides (MeOx), for example electrical conducting sub‐stoichiometric Molybdenum‐Oxide (MoOx) can be used to create dark layers to cover otherwise reflective lines. While the optical properties are well developed and understood, this work focuses on the investigation of chemical stability, relevant for process integration. For this we analyze and compare different alloys and summarize the thin film properties for different applications.

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Molybdenum gate line resistance is a critical item for future high end TFT devices. While conventional Molybdenum lines are well established, the application of better conducting materials poses new challenges to stability and process integration. In our work we investigate and discuss application of different seed layer materials to lower the line resistance of Molybdenum while keeping its superior processability. Our results show that the application of a thin seed layer below the Molybdenum layer can reduce resistance of main Molybdenum film by up to 30%.

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