28.1: AMOLED using CW laser Crystallized Polycrystalline Silicon Thin-Film Transistor

Abstract

We have developed a 2.2‐inch QQVGA AMOLED display using CW laser crystallized (CLC) poly‐Si backplane. By using CW laser, the a‐Si on glass could be crystallized into one dimensional single crystalline silicon as a result of sequential lateral crystallization (SLC) region. The SLC region was used as an active layer of AMOLED backplane. The p‐channel poly‐Si TFT on SLC region exhibited the field‐effect mobility of 173 cm2 /Vs, gate voltage swing of 0.5 V/dec. and threshold voltage of − 4.1 V. The brightness uniformity of AMOLEDs with and without compensation circuits have been compared.