We studied the kinetics of Ni-induced crystallization of amorphous silicon (a-Si) using a silicon-nitride false(SiNxfalse) cap layer (metal induced crystallization through a cap, MICC). Ni particles were sputtered onto the SiNx/normala­normalSi layer, and then it was annealed in a rapid thermal annealing system. The Ni diffuses through a SiNx cap and then forms NiSi2 crystallites in a-Si, which is able to induce crystallization. The grain size increases from 27 to 50 μm with increasing the cap layer thickness from 50 to 350 nm and decreases from 80 to 27 μm with increasing the metal density on the cap from 1×1014 to 5.5×1014 atom/cm2. These results can be interpreted by assuming a critical size of NiSi2 crystallite required to induce crystallization. The formation of NiSi2 crystallites, lateral crystallization from these seeds, and formation of disk-like grains have been observed by optical microscopy. © 2004 The Electrochemical Society. All rights reserved.

The femtosecond laser-induced grating (FLIG) formation and crystallization were investigated in amorphous silicon (a-Si) films, prepared on glass by plasma-enhanced chemical-vapor deposition. Probe-beam diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy were employed to characterize the diffraction properties and the microstructures of FLIGs. It was found that i) the FLIG can be regarded as a pattern of alternating a-Si and microcrystalline-silicon (microc-Si) lines with a period of about 2microm, and ii) efficient grating formation and crystallization were achieved by high-intensity recording with a short writing period.

We have developed a super large grain poly-Si on glass by CW laser crystallization using cylindrical microlens array. A giant-grain poly-Si with average grain size of 15 ㎛ × 15 ㎛ was achieved. The n-channel TFT using the poly-Si exhibited the fieldeffect mobility, on/off current ratio, threshold voltage and gate voltage swing of 470 cm 2 /Vs, ~10 8 , 0.1 V and 0.4 V/dec., respectively. On the other hand, the p-channel TFT exhibited 192 cm 2 /Vs, ~10 8 , -2.2 V and 0.5 V/dec., respectively. A single crystalline Si on glass can be achieved with this technique.

No abstract

No abstract