7.3: Giant‐grain Poly‐Si by CW Laser Annealing of a‐Si with Cylindrical Microlens Array

Son, Yong-Duck; Son, Nam-Kil; Kim, Ki-Hyung; Kim, Eun‐Hyun; Oh, Joo Hyeong; Jang, Jin

doi:10.1889/1.2785230

Cited by 6 publications

(4 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be achieved by optimizing the crystallization conditions such as the laser power and the scanning speed. We developed a giant-grain Si with the use of cylindrical microlens on the top of the a-Si [17]. Figure 2 shows the TFT performance achieved from the CLC poly-Si with super-grain.…”

Section: Results and Discussion Amorphous Silicon Tftmentioning

confidence: 99%

TFT Technologies for Large Area Electronics

Jang¹

2007

ECS Trans.

View full text Add to dashboard Cite

The TFT technologies developed at ADRC on amorphous silicon (a-Si), polycrystalline silicon (poly-Si) and organic semiconductor are summarized. The a-Si TFT was used for visible light detection as well as switching devices of AMLCD. As a result, the AMLCDs with imbedded sensor or imbedded backlight control sensor were developed. Poly-Si is used for mobile applications with smart design and integrated circuits. We developed a new CW laser crystallization for the super-grain poly-Si and disk-shaped grain growth using a Ni mediated solid phase crystallization. The organic TFT was developed with a self-organized process and printable TFT was fabricated for the low-cost array on plastic.

show abstract

Section: Results and Discussion Amorphous Silicon Tftmentioning

confidence: 99%

TFT Technologies for Large Area Electronics

Jang¹

2007

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…Finally, laser annealing and crystallization of amorphous Si have also been explored using visible light generated by nanosecond pulsed and continuous wave lasers [50][51][52]. Son et al [53] employed a Nd:YVO 4 continuous wave (CW) laser with a wavelength of 532 nm (green light), an output power of 7.5 W, and a scanning speed of 270 mm/s to crystallize the samples. The laser beam had dimensions of 20 µm (short axis, scan direction) × 800 µm (long axis, transverse direction), with a Gaussian shape in the short axis and a top-hat shape in the long axis.…”

Section: Silicon Laser Annealingmentioning

confidence: 99%

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

Arduino,

Stassi,

Spano

et al. 2023

Materials

View full text Add to dashboard Cite

Modifying material properties within a specific spatial region is a pivotal stage in the fabrication of microelectronic devices. Laser annealing emerges as a compelling technology, offering precise control over the crystalline structure of semiconductor materials and facilitating the activation of doping ions in localized regions. This obviates the necessity for annealing the entire wafer or device. The objective of this review is to comprehensively investigate laser annealing processes specifically targeting the crystallization of amorphous silicon (Si) and silicon carbide (SiC) samples. Silicon finds extensive use in diverse applications, including microelectronics and solar cells, while SiC serves as a crucial material for developing components designed to operate in challenging environments or high-power integrated devices. The review commences with an exploration of the underlying theory and fundamentals of laser annealing techniques. It then delves into an analysis of the most pertinent studies focused on the crystallization of these two semiconductor materials.

show abstract

“…The peak luminance reached 600 cd/m 2 and color saturation was more than 110 % of NTSC triangle. Examples of other advanced laser techniques include phase-modulated excimer-laser anneal (PM-ELA) (Oh et al 1998), selectively enlarging laser crystallization (SELAX) (Hatano et al 2002), continuous wave laser crystallization (CLC) (Hara et al 2001), and CW laser crystallization with cylindrical microlens (Sohn and Jang 2007).…”

Section: Laser-based Ltpsmentioning

confidence: 99%

Active Matrix for OLED Displays

2015

Handbook of Visual Display Technology

View full text Add to dashboard Cite

Significant progress has been made in the past two decades in AMOLED displays. As current driven devices, OLEDs present tremendous challenge in developing the right active matrix backplanes. Various technologies have been and continue to be investigated for driving AMOLEDs. The start of mass production of small size AMOLEDs by Samsung in 2007 established LTPS as the leading backplane technology. However, the scaling of AMOLEDs for large TV applications demands a low-cost backplane technology. This need has propelled the intensive R&D work in oxide TFT backplane, leading to its commercialization in LG's 55 00 OLED TV in early 2013. In this chapter, active matrix for OLEDs will be discussed based on the type of backplane

show abstract

7.3: Giant‐grain Poly‐Si by CW Laser Annealing of a‐Si with Cylindrical Microlens Array

Cited by 6 publications

References 14 publications

TFT Technologies for Large Area Electronics

TFT Technologies for Large Area Electronics

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

Active Matrix for OLED Displays

Contact Info

Product

Resources

About