We have developed a super large grain poly-Si on glass by CW laser crystallization using cylindrical microlens array. A giant-grain poly-Si with average grain size of 15 ㎛ × 15 ㎛ was achieved. The n-channel TFT using the poly-Si exhibited the fieldeffect mobility, on/off current ratio, threshold voltage and gate voltage swing of 470 cm 2 /Vs, ~10 8 , 0.1 V and 0.4 V/dec., respectively. On the other hand, the p-channel TFT exhibited 192 cm 2 /Vs, ~10 8 , -2.2 V and 0.5 V/dec., respectively. A single crystalline Si on glass can be achieved with this technique.

We have developed a 2.2‐inch QQVGA AMOLED display using CW laser crystallized (CLC) poly‐Si backplane. By using CW laser, the a‐Si on glass could be crystallized into one dimensional single crystalline silicon as a result of sequential lateral crystallization (SLC) region. The SLC region was used as an active layer of AMOLED backplane. The p‐channel poly‐Si TFT on SLC region exhibited the field‐effect mobility of 173 cm2 /Vs, gate voltage swing of 0.5 V/dec. and threshold voltage of − 4.1 V. The brightness uniformity of AMOLEDs with and without compensation circuits have been compared.