2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection

Ikawa, Yusuke; Yorihide, Yuasa; Hu, Cheng-Yu; Ao, Jin‐Ping; Ohno, Yasuo

doi:10.1587/transele.e93.c.1218

Cited by 3 publications

(2 citation statements)

References 10 publications

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“…Current collapse in AlGaN/GaN heterostructure FETs (HFETs) is also considered to be caused by negative charges appearing on the drain side of the i-GaN region when a high drain bias is applied. There are several possible mechanisms of negative-charge formation, such as electron injection at the AlGaN surface, 3) but one mechanism is that entailing deep traps in the i-GaN layer. In such cases, the potential profiles are similar to those in side-gating effects, namely, a negative charge appears on the positive-bias side of the i-GaN region, that is, the drain.…”

Section: Introductionmentioning

confidence: 99%

Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Ohno

Kio

Ikawa

et al. 2013

Jpn. J. Appl. Phys.

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The side-gating effect was demonstrated in AlGaN/GaN heterostructure field effect transistors (HFETs) for the first time. Using 10-µm-thick i-GaN buffer layers, drain currents decreased significantly with the application of a negative bias on a side gate 8 µm away from the FET. The transient responses with LED illumination demonstrated half-recovery condition that can be interpreted as a negative-charge redistribution through a hole emission from traps. The application of a positive side-gate bias confirmed the half-recovery mechanism. From the temperature variation measurements, the trap energy level is estimated to be 0.76 eV from the valence band with a hole capture cross section of approximately 4×10-16 cm2. All these results indicate that the side-gating effect is caused by hole traps in the i-GaN layer, which is in accord with the Shockley–Read–Hall model of deep traps.

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Section: Introductionmentioning

confidence: 99%

Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Ohno

Kio

Ikawa

et al. 2013

Jpn. J. Appl. Phys.

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“…7) Developing appropriate measures to achieve actual collapse-free operation, therefore, requires a thorough understanding of the complex interplay of trapped charges and the internal electric field in AlGaN=GaN HEMTs. [8][9][10][11] Electroluminescence (EL) spectroscopy is an established means of identifying high-field regions in compound semiconductor devices. [12][13][14][15][16][17] EL in AlGaN=GaN HEMTs is usually associated with intervalley transitions 18,19) or bremsstrahlung 20,21) involving hot electrons generated by high electric field.…”

mentioning

confidence: 99%

Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse

Ohi¹,

Yamazaki²,

Asubar³

et al. 2018

Appl. Phys. Express

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We report on the correlation between the electroluminescence and current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Standard passivated devices suffering from severe current collapse exhibited high-intensity whitish electroluminescence confined near the drain contact. In contrast, devices with reduced current collapse resulting from oxygen plasma treatment or GaN capping showed low-intensity reddish emission across the entire gate–drain access region. A qualitative explanation of this observed correlation between the current collapse and electroluminescence is presented. Our results demonstrate that electroluminescence analysis is a powerful tool not only for identifying high-field regions but also for assessing the degree of current collapse in AlGaN/GaN HEMTs.

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Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed $I{-}V$ Measurements

Wakejima

Wilson

Mase

et al. 2013

IEEE Trans. Electron Devices

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2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection

Cited by 3 publications

References 10 publications

Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse

Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed $I{-}V$ Measurements

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