2D Perovskite Sr2Nb3O10 for High‐Performance UV Photodetectors

Liu, Siyuan; Zhang, Yong; Yang, Wei; Liu, Hui; Fang, Xiaosheng

doi:10.1002/adma.201905443

Cited by 241 publications

(115 citation statements)

References 46 publications

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“…Although NBIT does not have a mechanically exfoliatable structure, the liquid exfoliation technique can be developed and employed in the future to further reduce NBIT into atomically thin layers. [51][52] Using NBIT as gate dielectric, current on-off ratio over 10 6 and electron field effect mobility up to 182 cm 2 V −1 s −1 have been achieved in vdW MoS 2 FeFET at 88 K. And metal to insulator transition has been realized under ferroelectric gating. Clockwise hysteresis loop observed with gate modulation indicates the domination of charge dynamics at the NBIT-MoS 2 interface.…”

Section: D-f) Energy Band Diagrams At Thementioning

confidence: 99%

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

et al. 2020

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control, which enhances the immunity to short channel effects. [1-5] Ferroelectric field-effect transistors (FeFETs) with a 2D channel and ferroelectric insulator take advantage of the large polarization charge density and high dielectric constant have recently attracted great attention in nonvolatile memory and low-power logic applications. [6-12] However, direct deposition of conventional ferroelectric insulators, such as hafnium or zirconium oxide (HfO 2 , ZrO 2) onto the 2D channel is challenging due to the absence of dangling bonds at the 2D semiconductor surface. Meanwhile, the manifest demonstration of ferroelectricity is critical to the thickness and doping of HfO 2 or ZrO 2 film. Transistors with polymer ferroelectric (e.g., poly[(vinylidene fluoride)-co-trifluoroethylene)] [P(VDF-TrFE)]) gated 2D channel have been thoroughly explored due to the facile device preparation. [13-16] However, the low polarizing performance and poor reliability of polymer ferroelectrics compared with inorganic ferroelectrics limit their applications in real device applications. Inorganic CuInP 2 S 6 (CIPS) down to ≈4 nm has recently been demonstrated to be compatible with van der Waals (vdW) heterostructure as room-temperature ferroelectric insulator for 2D FeFETs. [17-19] Nevertheless, its relatively low Curie point of 315 K (T c , phase transition from ferroelectric to paraelectric) hinders high temperature ferroelectric applications. Same issue is also found for some of the organic polymer ferroelectrics. Aurivillius bismuth layer-structured ferroelectric (BLSF) Na 0.5 Bi 4.5 Ti 4 O 15 (NBIT) has received significant attention in virtue of their high Curie temperature of ≈650 °C, high resistivity, low leakage current, low dielectric loss, low aging rate, and excellent thermal stability, which are attractive for hightemperature piezoelectric devices and ferroelectric nonvolatile random-access memory storage devices. [20-25] A high dielectric constant of 140-180 at room temperature has been reported in the NBIT synthesized by solid-state reaction process, and it is stable over an ultrawide temperature range from room temperature to ≈400 °C. [26] However, NBIT prepared by traditional solid-state reaction methods inevitably suffers from these issues, such as significant impurity phase, irregular flake shape, rough surface. [27] The nanoscale NBIT flakes synthesized by wet chemical methods have the problem of severe agglomeration Ferroelectric field-effect transistors (FeFETs) have recently attracted enormous attention owing to their applications in nonvolatile memories and low-power logic electronics. However, the current mainstream thin-film-based ferroelectrics lack good compatibility with the emergent 2D van der Waals (vdW) heterostructures. In this work, the synthesis of thin ferroelectric Na 0.5 Bi 4.5 Ti 4 O 15 (NBIT) flakes by a molten-salt method is reported. With a dry-transferred NBIT flake serving as the top-gate dielectric, dual-gate molybdenum disulfide (MoS 2) FeFETs are fabricated in a full vdW stacking structur...

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Section: D-f) Energy Band Diagrams At Thementioning

confidence: 99%

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

et al. 2020

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“…Nanocrystals, especially semiconductor ones, usually possess unique chemical, electrical, optical and magnetic properties compared to their bulk counterparts . These properties are highly dependent on the chemical composition, size, shape and surface state of the nanocrystals .…”

Section: Figurementioning

confidence: 99%

Crack Formation on Crystalline Bismuth Oxychloride Thin Square Sheets by Using a Wet‐Chemical Method

Wang

Zhou

et al. 2020

ChemNanoMat

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The morphology of nanocrystals is crucial in modulating their properties including optical, chemical and catalytic ones. For the intensively studied sheet-like structures, it is also important to engineer their detailed nanostructures on sheet surfaces. In this work, micron-sized bismuth oxychloride (BiOCl) thin square sheets in tetragonal matlockite-like phase and the corner-truncated ones were successfully synthesized by using a simple wet-chemical method. These square sheets could be partially etched, forming surface cracks with the size and density easily tuned. Two different types of cracks were observed on the surfaces of the corner un-truncated and truncated BiOCl square sheets. Surprisingly, radial cracks formed on the corner-truncated BiOCl sheets, which is attributed to the existence of physical stress during the etching and is highly related to the original nanostructure of the BiOCl sheets. This work provides a wet-chemical method for engineering surface cracks, especially radial cracks, on the surfaces of BiOCl nanosheets, which may be expanded to surface engineering of other nanosheets and will show a great potential in various fields. Nanocrystals, especially semiconductor ones, usually possess unique chemical, electrical, optical and magnetic properties compared to their bulk counterparts. [1][2][3][4][5][6] These properties are highly dependent on the chemical composition, size, shape and surface state of the nanocrystals. [3,[7][8][9][10][11] Therefore, controlled synthesis of nanocrystals is becoming a hot topic in many fields, and lots of efforts have been made to precisely control the morphology and surface state of the nanocrystals. [9,[12][13][14][15][16][17] Among various shaped nanocrystals, the sheet-like ones show promising properties and applications due to their structural simplicity, large surface area, easy charge separation, etc. [18][19][20][21] Sheet-like [a] R.

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“…In the past few years, atomically thin 2D semiconductor materials with single-to few-layer thickness have been investigated for a wide range of applications. [1][2][3][4][5][6][7][8][9][10] Among 2D semiconductor materials, molybdenum disulfide (MoS 2 ) has been studied the most extensively and has garnered tremendous attention because of its relatively large bandgap, high carrier mobility, excellent chemical thermal stability, and high surface-to-volume ratio. [11][12][13][14][15] The considerable development of MoS 2 field effect transistors (FETs) enables potential applications in fields such as future electronics and chemical sensors.…”

Section: Introductionmentioning

confidence: 99%

Humidity‐Dependent Characteristics of Few‐Layer MoS₂ Field Effect Transistors

Yang

Cai

et al. 2020

Adv Elect Materials

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reasons: i) few-layer MoS 2 has a smaller bandgap thus it can boost the current drive of FETs; ii) few-layer MoS 2 is less sensitive to ambience due to the smaller specific surface area; iii) few-layer MoS 2 is more immune to noise in air; iv) few-layer MoS 2 is more suitable for practical fabrication process to form large-area films. [19,20] Despite the above mentioned stability and feasibility, few-layer MoS 2 is highly sensitive to temperature and environmental gas, which seems to be limitations but actually offers new direction for the applications of few-layer MoS 2. [19,21-24] The effects of environmental gas on few-layer MoS 2 FET have been extensively studied in bottom gate configuration, paving the way for chemical sensors where changes of resistance and drain current are responsible for a successful detection. [23,24] Unfortunately, for these few-layer MoS 2 FETs, the humidity effects have not been systematically studied so far. Even though a few reports have discussed humidity-dependent transfer characteristics of MoS 2 FETs, these papers mainly focused on the single-or multilayer MoS 2 FETs. [25-28] Further, most of these works just demonstrated humidity sensing as proof-of-concept and failed to point out the subtleties of humidity-sensing performance and its relation to layered structures. To explore the intrinsic properties and improve the performance of few-layer MoS 2 FETs, thorough investigation of such humidity effects is required. Herein, tri-and six-layer MoS 2 films were prepared to fabricate FET-based humidity sensors and their characteristics, including on-state current, mobility, subthreshold slop, and hysteresis, were measured and discussed. Specially, the transfer characteristics in the linear regime (at low drain voltage, V DS) as a function of relative humidity (RH) in darkness were investigated to reveal the effect of humidity on the FETs. These results show that humidity significantly affects the electrical properties of few-layer MoS 2 FETs.

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2D Perovskite Sr₂Nb₃O₁₀ for High‐Performance UV Photodetectors

Cited by 241 publications

References 46 publications

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Crack Formation on Crystalline Bismuth Oxychloride Thin Square Sheets by Using a Wet‐Chemical Method

Humidity‐Dependent Characteristics of Few‐Layer MoS₂ Field Effect Transistors

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2D Perovskite Sr2Nb3O10 for High‐Performance UV Photodetectors

Cited by 241 publications

References 46 publications

Charge–Ferroelectric Transition in Ultrathin Na0.5Bi4.5Ti4O15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Charge–Ferroelectric Transition in Ultrathin Na0.5Bi4.5Ti4O15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Crack Formation on Crystalline Bismuth Oxychloride Thin Square Sheets by Using a Wet‐Chemical Method

Humidity‐Dependent Characteristics of Few‐Layer MoS2 Field Effect Transistors

Contact Info

Product

Resources

About

2D Perovskite Sr₂Nb₃O₁₀ for High‐Performance UV Photodetectors

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Humidity‐Dependent Characteristics of Few‐Layer MoS₂ Field Effect Transistors