3.2: Invited Paper: Application of Rotation Magnet Sputtering Technology to a‐IGZO Film Depositions

Abstract

Application of Rotation Magnet Sputtering Technology to a-IGZO Film DepositionsTetsuya Goto*, Shigetoshi Sugawa* and Tadahiro Ohmi* * Tohoku University, Japan AbstractWe developed new magnetron sputtering equipment called rotation magnet sputtering (RMS), where multiple moving plasma loops are exited on the planar target surface, obtaining high target utilization. The moving plasma loops also worked efficiently to homogenize the spatial distribution of a-IGZO film qualities by time-averaged homogenization effect.

Studies on fully transparent Al–Sn–Zn–O thin-film transistors fabricated on glass at low temperature

“…1,2) Compared with conventional Si-based TFTs (a-Si and poly-Si TFTs), [3][4][5] the metal oxide semiconductor TFTs have excellent performance, such as transparency, lowtemperature processing, low cost, and high device mobility, which indicate their promising applicability to the AMOLED backplane 6,7) and other advanced display technologies. In-Ga-Zn-O (IGZO) [8][9][10][11] has attracted much attention as a potential candidate for next-generation display technologies. However, the Ga and In elements are both toxic and rare metals, which are unsuitable for sustainable mass and environmentally friendly production.…”