3-D finite element simulator for migration effects due to various driving forces in interconnect lines

Rzepka, Sven; Meusel, E.; Korhonen, M. A.; Li, C.-Y.

doi:10.1063/1.59902

Cited by 26 publications

(29 citation statements)

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“…The mathematical formulations for the atomic flux (AF) and AFD due to the electron-wind force (EWM), stress-migration (SM) and thermo-migration (TM) are taken from the work done by Dalleau et al [17] and Rzepka et al [18], where the individual atomic fluxes due to EWM, SM and TM are computed and added to obtain the resultant AF and corresponding AFD. As only time zero EM test condition is considered in this modelling, the atomic concentration of Cu is taken as uniform [4,17].…”

Section: Model Descriptionmentioning

confidence: 99%

Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures

Roy

Tan

Kumar

et al. 2005

Microelectronics Reliability

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Section: Model Descriptionmentioning

confidence: 99%

Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures

Roy

Tan

Kumar

et al. 2005

Microelectronics Reliability

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“…The decoupling of creep problem is achieved by its decomposition into the linear elasticity and mass flow subproblems, which are solved in an iterational process. Rzepka et al [3] applied similar technique to a 3-D model of interconnect. We propose a different approach by utilizing the thermodynamical coupling equations and the concept of grain boundary region of finite thickness.…”

Section: Ta Linermentioning

confidence: 99%

Analysis of diffusional stress relaxation in submicron Cu interconnect structures using the model with enhanced vacancy diffusivity in grain boundary region

Tsukrov¹,

Grich²,

Gross³

2006

WIT Transactions on the Built Environment, Vol 85

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We propose the finite element simulation technique to model the process of diffusional creep and stress relaxation that occurs in Cu-damascene interconnects of integrated circuit devices in the processing stage. On the length scale of the interconnect lines (microns), the stress-induced mass flow constitutes the major mechanism of inelastic deformation. The mass flow problem is coupled to the stress analysis through vacancy flux and equilibrium vacancy concentration, allowing independently for the concentration profile and evolution of the stresses and strains in an iterative process to be solved. We decompose the total displacement field into the elastic part and the inelastic mass flow contribution. Performing the stress analysis in the configuration with accumulated inelastic displacements, we ensure that the shape of the interconnect line is compatible with external geometrical constraints throughout the simulation. This approach has been implemented in the software package that seamlessly integrates the problem-oriented code with the commercially available finite element program MSC.Marc. We apply the technique to model the Coble creep phenomenon by introducing the nanoscale grain boundary region having the thickness of the order of several layers of atoms. As an illustration, the problem of stress relaxation in a single grain subjected to prescribed displacements and tractions is examined. deformation, finite elements.High Performance Structures and Materials III 685

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“…Then, in order to limit current crowding, the 2D model emerged [16]. As most physical system can be described based on a set of partial differential equations, FEM is evolved to be a effective tool in solving these partial differential equations and obtaining solutions that represent the [20]. However, 2D modeling was also unable to represent the geometry of the whole circuit due to layers overlapping.…”

Section: Statistical Survey Analysismentioning

confidence: 99%

Review of the Global Trend of Interconnect Reliability for Integrated Circuit

Lin¹,

Wu²,

Jia³

2018

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Interconnect reliability has been regarded as a discipline that must be seriously taken into account from the early design phase of integrated circuit (IC). In order to study the status and trend of the interconnect reliability, a comprehensive review of the published literatures is carried out. This can depict the global trend of ICs' interconnect reliability and help the new entrants to understand the present situation of this area.

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3-D finite element simulator for migration effects due to various driving forces in interconnect lines

Cited by 26 publications

References 0 publications

Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures

Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures

Analysis of diffusional stress relaxation in submicron Cu interconnect structures using the model with enhanced vacancy diffusivity in grain boundary region

Review of the Global Trend of Interconnect Reliability for Integrated Circuit

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