3-D Monte Carlo simulations of FinFETs

Kathawala, G.

doi:10.1109/iedm.2003.1269372

Cited by 12 publications

(9 citation statements)

References 10 publications

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“…However, it has been reported in literature that, as long as tunneling is neglected, the main quantum mechanical effect on transport down to the sub-10 nm range is charge displacement from the interface [25]- [27]. This effect is correctly accounted for in our Monte Carlo simulator (named MC++) by adding an appropriate quantum mechanical correction to the potential profile [14]- [16]. We take this correction from the self-consistent solution of the Schrödinger equation (SE) with traditional coupled Poisson-Monte Carlo simulation.…”

Section: Simulation Methodology and Physical Modelsmentioning

confidence: 99%

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Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Ghetti

Carnevale

Rideau

2007

IEEE Trans. Nanotechnology

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In this paper we report on a general methodology to investigate nanowire MOSFETs based on the coupling of mechanical simulation with 3-D real-space Monte Carlo simulation. The Monte Carlo transport model accounts for both strain silicon and quantum mechanical effects. Mechanical strain effects are accounted for through an appropriate change of the anisotropic band structure computed with the empirical pseudopotential method. Quantum effects are instead included by means of a quantum mechanical correction of the potential coming from the self-consistent solution of the Schrödinger equation. This methodology has been then applied to the simulation of a test case silicon nanowire n-MOSFET. Impact of mechanical strain and quantum effects on the drive current is investigated. It is shown that only the inclusion of strain and quantum mechanical effects allows a good agreement with experimental data, demonstrating the validity of the proposed methodology for ultimate devices.Index Terms-Monte Carlo simulation, nanowire MOSFET, quantum effects, strained silicon.

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Section: Simulation Methodology and Physical Modelsmentioning

confidence: 99%

“…In this case, in order to account for QM effects, the semiclassical MC technique must be modified. Usually, a potential correction term is added to account for the effect of charge quantization [14]- [16], or multi subband approaches must be exploited [17], [18], but this has been done with the inclusion of strain only in 2-D [19], [20].…”

Section: Introductionmentioning

confidence: 99%

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Ghetti

Carnevale

Rideau

2007

IEEE Trans. Nanotechnology

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“…We employ a quantum corrected 3D particle Monte Carlo (MOCA 3D) described in [5]. Quantum effects due to the sudden change in potential at the Si-SiO 2 interface in essence leads to a repulsion of charge density from the interface.…”

Section: Simulationmentioning

confidence: 99%

3D Monte Carlo simulation of transport in electro‐statically confined silicon nanochannels

Mohamed

Martin

2008

Phys. Status Solidi (c)

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This study investigates transport and electrostatic behavior of quasi 1D nanowires adopting a relatively simple planar fabrication technique. The confined conduction channel is created by etching an oxide trench, realizing a T‐gate structure. Since multiple channels are normally needed to realize sufficient current drive in practical applications, the behavior of single and coupled adjacent silicon nanowires is characterized using a 3D quantum corrected Monte Carlo approach. Results indicate that a single T‐gate structure provides over 27% increase in current drive compared to conventional MOSFET at a drain voltage of 1V. In addition, design consideration and recommendation is presented. Cross section of a T‐gate MOSFET. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Among the DC characteristics of DG MOSFETs, the threshold voltage (V th ) behavior is very important for accurate analysis, device design, and circuit design. To apply DG MOSFETs 7,8) in integrated circuits, V th behavior should be characterized, and parameters for V th should be extracted. Therefore, we proposed a V th0 (V th at a low drain bias) model of DG MOSFETs with a doped channel based on charge-sharing length (x h ) and surface potential lowering.…”

Section: Introductionmentioning

confidence: 99%

Threshold Voltage Modeling of Fully Depleted Nanoscale Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel by Considering Drain Bias

Choi

Kwon

Cho

et al. 2009

jjap

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The threshold voltage (V th ) was modeled in a simple closed form by considering drain bias (V DS ) for fully depleted (FD) symmetric doublegate (DG) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with doped short channels. The V th model using only two parameters (D G and D D ) is based on V th0 (V th at low V DS ), and derived from the diffusion current of doped DG MOSFETs that was modeled using surface potential (È s ). D G and D D are parameters for considering the gate bias (V GS ) dependence and V DS dependence, respectively, in the diffusion current model. Our compact V th model predicted the threshold voltage behavior by considering V DS more accurately than the constant current (CC) method down to a channel length (L) of 30 nm.

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3-D Monte Carlo simulations of FinFETs

Cited by 12 publications

References 10 publications

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

3D Monte Carlo simulation of transport in electro‐statically confined silicon nanochannels

Threshold Voltage Modeling of Fully Depleted Nanoscale Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel by Considering Drain Bias

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