3-D numerical simulation of bipolar amplification in Junctionless Double-Gate MOSFETs under heavy-ion irradiation

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

“…In the case of a larger radius the bipolar gain changes for all devices, but the bipolar amplification of JL-DGFET is still higher than that of IM-DGFET (for all LET values). These results are consistent with simulation data obtained in [39]. Compared to FDSOI, the bipolar amplification of JL-DGFET is weaker for LET values less than 1 MeV/(mg/cm 2 ), and becomes slightly higher for LET>1 MeV/(mg/cm 2 ).…”

“…These previous studies show that IM-DGFET shows a better resistance to radiation than Fully Depleted SOI transistors (FDSOI) with single-gate, due to the enhanced control of the film potential by the two connected gates which reduces the floating-body effects. The bipolar amplification of JL-DGFET was studied in [39] and compared to that of IM-DGFET with similar geometrical parameters. In that work, we have shown that JL-DGFET is characterized by a higher bipolar gain than IM-DGFET, due to worse radiation hardness.…”

SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation

“…From a radiation-sensitivity point of view, the high doping level in the film of a JL MOSFET could have a negative impact on its immunity to single events, because floating body effects are expected to be strong. This was confirmed by our previous works [15][16] concerning the radiation-induced transient behavior of JL Double-Gate (JL-DG) MOSFETs.…”

“…These previous studies demonstrated that IM-DG shows a better resistance to radiation than IM-SOI, due to the enhanced control of the film potential by the two connected gates which reduces floating-body effects. The bipolar amplification of JL-DG was studied in [15] and compared to that of IM-DG with similar geometrical parameters. In that previous work, we have shown that JL-DG is characterized by a higher bipolar gain than IM-DG, due to stronger floatingbody effects.…”

Effect of Underlap and its Soft Error Performance in 30 nm Junctionless-based 6T-SRAM Cell

“…The SEU radiation analysis of a junctionless device is studied by Munteanu et. al [15]. Soft error study of Junctionless FinFET based SRAM is studied in [16].…”