3-D silicon vector sensor based on a novel parallel-field Hall microdevice

Roumenin, Chavdar; Nikolov, Dimitar; Ivanov, A.

doi:10.1016/j.sna.2003.07.010

Cited by 19 publications

(4 citation statements)

References 17 publications

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“…A new design of five-contact parallel-field silicon Hall microsensor is investigated in [13]. Compared to all well-known similar elements, its measuring Hall terminals H 1 and H 2 are located outside the current-flow active region.…”

Section: Concept Of the Novel Two-axis Hall Devicementioning

confidence: 99%

“…Only in case of complete summing up of these Hall voltages could equality of the sensitivities in microsensors with orthogonal and parallel-field activation be achieved. If the parallel-field Hall device is deep enough, by using four separate sensing contacts only, H 1 -H 2 and H 3 -H 4 , located at the top side of the silicon chip, where one of the terminal pairs is located in the zone of the inside supply contacts [6,9,16], and the other terminal pair is located in the zone outside the supply electrodes [6,9,13], it is possible to achieve maximum sensitivity [15]. So far, in parallel-field Hall microsensors, the Hall voltage has been measured experimentally by two contacts, H 1 and H 2 , and in the elements with minimal design complexity -by one contact H [6,9,11,12,16].…”

Section: Concept Of the Novel Two-axis Hall Devicementioning

confidence: 99%

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Angular position device with 2D low-noise Hall microsensor

Lozanova

Roumenin

2010

Sensors and Actuators A: Physical

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Section: Concept Of the Novel Two-axis Hall Devicementioning

confidence: 99%

Section: Concept Of the Novel Two-axis Hall Devicementioning

confidence: 99%

Angular position device with 2D low-noise Hall microsensor

Lozanova

Roumenin

2010

Sensors and Actuators A: Physical

Self Cite

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“…In the angle measurement, the multi-directional (2D) sensor is rotated inside the electromagnetic field, and the Hall voltages of the rotational angles, as a function of the sine and cosine functions, determined. In principle, the amplitudes of the sine and cosine curves are shifted 90° [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Contactless Silicon-Based Multi-Dimensional Hall Sensor with Simultaneous Magnetic Sensing and Omni-Rotational Angle Measurement

Kaewjumras

Prabket

Titiroongruang

et al. 2019

JERA

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This experimental research proposes a contactless silicon-based two-dimensional (2D) Hall sensor capable of simultaneous parallel-and perpendicular-directional magnetic sensing, with a 360° angle measurement. The Hall sensor was of non-symmetrical five-ohmic contact configuration (C1 – C5). In the study, experiments were carried out in three stages. In the first-stage experiment, the current (I) and voltage (V) of the 2D Hall sensor were determined under three schemes: schemes A (C1&C2), B (C2&C5), and C (C3&C4). In the second-stage experiment, the parallel and perpendicular absolute sensitivities of the 2D sensor were examined. Considering the discrepancy between the parallel and perpendicular absolute sensitivities, signal conditioning circuitry was incorporated into the sensor system to compensate, and the rotational angles measured in the final-stage experiment. The results revealed that the I-V curves were dominantly linear, corresponding to Ohm’s law. However, the parallel and perpendicular absolute sensitivities were low and unequal. Thus, signal conditioning circuitry was incorporated into the system to address the discrepancy and improve the performance. Importantly, the 2D Hall sensor exhibited a mere ±3odiscrepancy between the measured and reference rotational angles, given the magnetic flux density of 1000 G, with the hysteresis error of 2.8%. In essence, the proposed contactless silicon-based 2D Hall sensor possesses high potential for high-precision industrial applications.

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“…magneto resistivesensors and flux gate sensors). The single chip 3-D Hall magnetic sensor based on the complementary metal-oxide semiconductor(CMOS) technology is the most possible solution [1], because the CMOS technology platform can make the 3-D magnetic sense unit within 100um*100um and connect signal conditioning circuit in the shortest way [2], which is extremely beneficial for reducing the 1/f noise and increasing thesensitivity. Meanwhile, the CMOS technology platform can integrate the digital signal processing part in the same chip.…”

Section: Introductionmentioning

confidence: 99%

Single-Chip Integrated 3-D Hall Sensor

Pan

Yao

et al. 2013

2013 Third International Conference on Instrumentation, Measurement, Computer, Communication and Control

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A single-chip three-dimensional(3-D)Hall sensor for high-accuracy three-axismagnetic-field measurements is presented. The chip contains a 3-D Hall device, the analog signal conditioning circuit, an A/D converter and the digital signal-processing unit. The 3-D Hall device contains horizontal and vertical Hall elements. The horizontal Hall element measures the perpendicular component, and four vertical Hallelements measure the two in-plane components of a magnetic flux. With the detailed analysis of the essential factors affecting Hall voltage, the signal conditioning circuit based on spinning current technique is provided, which works in 100kHz and can cancel the offset, reduce the 1/f noise and amplify the signal. The digital signal-processing unit provides the high-accuracy mapping algorithm between measured values and target values.

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3-D silicon vector sensor based on a novel parallel-field Hall microdevice

Cited by 19 publications

References 17 publications

Angular position device with 2D low-noise Hall microsensor

Angular position device with 2D low-noise Hall microsensor

Contactless Silicon-Based Multi-Dimensional Hall Sensor with Simultaneous Magnetic Sensing and Omni-Rotational Angle Measurement

Single-Chip Integrated 3-D Hall Sensor

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