300 V integrated charge pump for lab on chip applications

Sloan, David; Hall, Gordon H.; Backhouse, C.; Elliott, D.G.

doi:10.1109/nano.2014.6968182

Cited by 5 publications

(1 citation statement)

References 15 publications

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“…Although charge pumps based on non-transistor components such as poly-silicon diodes have been proposed, their maximum voltages are still less than 50 V [37]. To obtain higher voltage endurance, the earlier reported HV generators (up to 300 V) used the lateral-diffused MOS (LDMOS) transistors [38] in HV CMOS technology, which exhibit high breakdown voltage up to 750 V [39]- [41]. However, these HV transistors also have high threshold voltages.…”

Section: Designmentioning

confidence: 99%

On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

Okamoto

Ryoson

Fujimoto

et al. 2020

J. Microelectromech. Syst.

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The rapid development of microfluidic technology has increased the demand for the integration of driving circuits in the microfluidic devices. We have proposed a novel on-chip electroosmotic (EOF) micropump integrated with a high-voltage (HV) generator. The HV (49.8 V) generator is based on a Dickson charge pump, which is fabricated on a silicon-on-insulator (SOI) substrate by the standard CMOS process, and the isolation is achieved by MEMS post-processed deep trench isolation. The size of the 49.8 V generator is 425×353 µ m 2 . The HV required for the successful operation of the micropump was generated by the integrated driving circuit with a low-voltage power supply. The maximum flow velocity and flow rate of the proposed EOF micropump were measured as 137 µ m/s and 167 nL/min, respectively when it was driven by the integrated 49.8 V generator. The efficiency of the micropump is demonstrated by comparing it with the previously reported micropumps. The proposed integration technique is reliable and effective, and potentially boosts the practical applications of lab-on-chip devices.

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