On-Chip High-Voltage Charge Pump With MEMS Post-Processed Standard 5-V CMOS on SOI for Electroosmotic Flow Micropumps

Okamoto, Yuki; Takehara, Hiroaki; Fujimoto, Koji; Ichikı, Takanori; Ohba, Takayuki; Mita, Yoshio

doi:10.1109/led.2018.2829925

Cited by 10 publications

(8 citation statements)

References 19 publications

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“…5, where the body and source in each transistor are connected. In the previous work, we demonstrated an efficient HV generator using the MEMS post-processed transistors [45]. Although we have proved that a high-efficient HV generator can be designed by 5 V CMOS technology and the MEMS post-process, the experiment was performed using an external PDMS micro-channel and bulk Pt electrodes.…”

Section: Designmentioning

confidence: 98%

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On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

Okamoto

Ryoson

Fujimoto

et al. 2020

J. Microelectromech. Syst.

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The rapid development of microfluidic technology has increased the demand for the integration of driving circuits in the microfluidic devices. We have proposed a novel on-chip electroosmotic (EOF) micropump integrated with a high-voltage (HV) generator. The HV (49.8 V) generator is based on a Dickson charge pump, which is fabricated on a silicon-on-insulator (SOI) substrate by the standard CMOS process, and the isolation is achieved by MEMS post-processed deep trench isolation. The size of the 49.8 V generator is 425×353 µ m 2 . The HV required for the successful operation of the micropump was generated by the integrated driving circuit with a low-voltage power supply. The maximum flow velocity and flow rate of the proposed EOF micropump were measured as 137 µ m/s and 167 nL/min, respectively when it was driven by the integrated 49.8 V generator. The efficiency of the micropump is demonstrated by comparing it with the previously reported micropumps. The proposed integration technique is reliable and effective, and potentially boosts the practical applications of lab-on-chip devices.

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Section: Designmentioning

confidence: 98%

“…2 becomes neglectable. In the experiment, we set the clock frequency to 20 MHz, since the previous study of driving an external EOF micropump in [45]…”

Section: A Integrated Hv Generatormentioning

confidence: 99%

On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

Okamoto

Ryoson

Fujimoto

et al. 2020

J. Microelectromech. Syst.

Self Cite

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“…If the size of the ESD protection and output filter is not considered, the implementations in [9], [14], [20] are of similar area as the charge pump cores of this work, but only achieve step-up ratios of respectively 3.2, 19, and 13.1, while also having a significantly higher input power. In [9], where no input power or efficiency specification was available, it must be assumed that the input power is at least the same as the output power, which is up to 44 times higher than the input power in this work.…”

Section: B Comparison With Prior Artmentioning

confidence: 99%

“…In [7], the breakdown limitation is sought circumvented through placing devices on top of the field oxide. In other literature, multi-chip solutions are proposed [8], and a range of studies [9]- [11] have used Silicon-On-Insulator (SOI) processes which feature high breakdown voltages. In this work, a 180 nm SOI process with devices having a breakdown voltage up to more than 200 V is used.…”

Section: Introductionmentioning

confidence: 99%

A 5 V to 180 V Charge Pump for Capacitive Loads in a 180 nm SOI Process

Toft

Jørgensen

2021

ELEKTRON ELEKTROTECH

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This paper presents two variants of a high step-up ratio charge pump for high voltage micro electro-mechanical system and condenser microphones. The implementations are based on an additive charge pump topology where respectively 46 and 57 cascaded stages are used to generate an output voltage of 182 V from a supply voltage of 5 V. The two charge pumps have been fabricated in a 180 nm SOI process with a breakdown voltage of more than 200 V and respectively occupy an area of 0.52 mm2 and 0.39 mm2. The charge pumps can output up to 182.5 V and 181.7 V and are designed to drive a capacitive load with a leakage of 2 nA. When driven with a 100 kHz clock, their power consumption is respectively 40 µW and 20 µW. The rise time of the charge pumps output from 0 V to 182 V is less than 5 ms. The implemented charge pumps exhibit state-of-the-art performance for very high voltage dc-dc capacitive drive applications.

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“…One approach is to use devices that can be implemented on top of the field oxide as the field oxide has a high breakdown voltage [4], another approach is to use multiple ASICs [5]. It is also possible to use processes that are designed for HV applications such as Silicon On Insulator (SOI) processes which has been the approach in [6], [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Novel Clocking Scheme with Improved Voltage Gain for a Two-Phase Charge Pump Topology

Toft

Jørgensen

2019

2019 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

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This paper presents a novel clocking scheme for the Favrat charge pump topology. The proposed clock scheme achieves an 8 % higher maximum power output and a 12 % higher maximum output voltage than the prior-art clock scheme. The novel clock scheme is part of the development of a very high voltage charge pump for MEMS applications. In this work a 46stage charge pump based on the Favrat charge pump topology has been fabricated in a 180-nm SOI process with a > 200 V breakdown voltage. With an input voltage of 5 V the fabricated charge pump reach an output voltage of 185 V when driven by the proposed clock scheme and loaded with a 2 nA load, the prior-art clock scheme can only reach an output voltage of 165 V with a 2 nA load.

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On-Chip High-Voltage Charge Pump With MEMS Post-Processed Standard 5-V CMOS on SOI for Electroosmotic Flow Micropumps

Cited by 10 publications

References 19 publications

On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

A 5 V to 180 V Charge Pump for Capacitive Loads in a 180 nm SOI Process

Novel Clocking Scheme with Improved Voltage Gain for a Two-Phase Charge Pump Topology

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