32 nm Gate Length FinFET: Impact of Doping

Abstract

FinFET, a self-aligned double-gate MOSFET structure has been agreed upon to eliminate the short channel effects. In this thesis, we report the design, fabrication and physical characteristics of n-channel FinFET with physical gate length of 32nm using visual TCAD (steady state analysis). All the measurements were performed at a supply voltage of 1.5V and T ox =5nm. We elucidate the impact of doping concentration on the Performance of n-channel 32nm gate length FinFET at 22nm width. The drain current increases gradually when donor ion concentration in source/drain regions increases to 7e20 cm -3 . Adding opposite type of source/drain impurity or decreasing acceptor ion concentration in channel further improves the performance of FinFET.