In this paper an n-type double gate FinFET at a gate length of 22nm is reported. Here the device performance of FinFET under different gate materials and also under different buried oxides is construed. Firstly, the drain current under different gate materials, with different work functions and SiO 2 being the buried oxide has been obtained. A transfer characteristic curve has then been obtained comparing the drain current for different gate materials at a given supply voltage of 0.5 V. Secondly, the transfer characteristic curve, comparing the drain currents obtained under different buried oxides at 0.5 V supply voltage with Aluminium being the gate has been obtained. And lastly obtained is the device performance for different combinations of gate materials and buried oxides and the results were compared. It can be inferred that, a metal gate and a high k dielectric is what gives a good performance at nanometre ranges. All the simulations have been done in Visual TCAD.

The FinFET transistor structure assures to rejuvenate the chip industry by rescuing it from the short-channel effects that limits the device scalability endured by current planar transistor structures. In this thesis, we report the design, fabrication and physical characteristics of n-channel FinFET with physical gate length of 32nm using visual TCAD (steady state analysis). All the measurements were performed at a supply voltage of 1.5V and 5 nm oxide thickness. We report the drain saturation current is 0.0343453mA at Vg=1V and 0.0410523mA at Vg=1.5V which indicates approximately 20 percent hike in Id with increase in 0.5V gate voltage. We simulate the device for distinct fin thickness from 5 nm to 50 nm. In this thesis we report, for 32 nm gate length FinFET having above 21.33 nm fin width would consequence in short channel effects in spite of having high drain current.

FinFET, a self-aligned double-gate MOSFET structure has been agreed upon to eliminate the short channel effects. In this thesis, we report the design, fabrication and physical characteristics of n-channel FinFET with physical gate length of 32nm using visual TCAD (steady state analysis). All the measurements were performed at a supply voltage of 1.5V and T ox =5nm. We elucidate the impact of doping concentration on the Performance of n-channel 32nm gate length FinFET at 22nm width. The drain current increases gradually when donor ion concentration in source/drain regions increases to 7e20 cm -3 . Adding opposite type of source/drain impurity or decreasing acceptor ion concentration in channel further improves the performance of FinFET.