32-site microelectrode modified with Pt black for neural recording fabricated with thin-film silicon membrane

Abstract

The impact of solvent and modifier on ZnO thin-film transistors fabricated by sol-gel process SCIENCE CHINA Technological Sciences 57, 2153 (2014); Printed flexible thin-film transistors based on different types of modified liquid metal with good mobility SCIENCE CHINA Information Sciences 62, 202403 (2019); Silicon-based microelectrode arrays for stimulation and signal recording of in vitro cultured neurons SCIENCE CHINA Information Sciences 54, 2199 (2011); Organic thin-film solar cells: Devices and materials SCIENCE CHINA Chemistry 55, 553 (2012);. RESEARCH PAPER. SCIENCE CHINA Information Sciences

Fabrication of strongly adherent platinum black coatings on microelectrodes array

“…The composite coating and tests were carried out on a type of homemade glass substrate ITO (indium tin oxide) MEAs. This fabrication method is applicable to other types of MEAs [19].…”

A silk-based self-adaptive flexible opto-electro neural probe

“…Neuroxess Co., Ltd. (Jiangxi), 330029 Nanchang, Jiangxi, China. 8 Guangdong Institute of Intelligence Science and Technology, Hengqin, 519031 Zhuhai, Guangdong, China. 9 Tianqiao and Chrissy Chen Institute for Translational Research, Shanghai, China…”

“…Highly precise optogenetic and electrophysiological studies provide an approach to correlate the neural activity of specific cells to observed behaviors, which is important for the explorations of neural circuits in the brain and the pathologies of the nervous system [1][2][3] . Embedded optical fibers 4,5 and electrode probes [6][7][8][9] are the most common invasive devices in the studies of these areas. Previous studies have shown that foreign body reactions due to chronic tissue damage lead to gradual encapsulation of the implanted probes, resulting in dysfunction of the devices 10 .…”

Wireless Closed-Loop Optical Regulation System for Seizure Detection and Suppression In Vivo

“…The size of the recording point on silicon MEA is 20 μm, the spacing between recording points is 200 μm, and the length is 5 mm. The detailed preparation process is shown in our previous study (Chen et al, 2014). The straightforward fabrication process is demonstrated in Figure 3A: the SOI wafer is cleaned with standard methods; SiO 2 is oxidized as the lower insulating layer; the metal is deposited and is patterned by stripping; the SiO 2 /SiN x /SiO 2 insulating layer is grown as the upper insulating layer; recording points and solder joints are exposed; photoresist is used as a mask layer, and the needle shape is etched; and the MEA is released from the silicon wafer.…”