325W HVHBT Doherty Final and LDMOS Doherty Driver with 30dB Gain and 54% PAE Linearized to -55dBc for 2c11 6.5dB PAR

Page, Preston; Steinbeiser, Craig; Landon, Thomas; Burgin, Gary; Hajji, R.; Branson, Roger; Krutko, Oleh; Delaney, Joe; Witkowski, L.

doi:10.1109/csics.2011.6062433

Cited by 8 publications

(3 citation statements)

References 4 publications

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“…In modern communication systems, frequency division multiplexing (OFDM) transceiver systems, such as long-term evolution (LTE), wideband code division multiple access (WCDMA), IEEE 802.11a OFDM Transceiver system and numerous IEEE wireless communication systems that adopt highly-efficient modulation schemes to enhance the spectral 2 RF power amplifier is an important device not only in wireless communication systems but also in TV transmission, radar systems and RF heating with the amplitude of radio frequency signal increase to high value [4,5]. Spectral efficiency and linearity are the main elements deriving the design of power amplifier.…”

Section: Introductionmentioning

confidence: 99%

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Towards a 15.5W Si-LDMOS Energy Efficient Balanced RF Power Amplifier for 5G-LTE Multi-carrier Applications

Mohammed¹,

Hussaini²,

Abd-Alhameed³

et al. 2018

EAI Endorsed Transactions on Creative Technologies

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In this paper, a 15.5W Si-LDMOS balanced RF power amplifier has been designed using 2.620-2.690GHz frequency band to improve efficiency and linearity for 5G-LTE mobile applications. The amplifier was designed and simulated using large signal Si-LDMOS transistor model to achieve 53% PAE, 41dBm Pout, 14 dB gain at P1dB saturation point. The proposed balanced RF power amplifier was fabricated and measurement results for phase variation of the signal between the carriers have been the main focus. At 1dB compression point power added efficiency increased to 81.5% with 19.5 gain at the Pout. The AM-AM and AM-PM measured data of the balanced RF power amplifier was extracted from the MATLAB fitting tool to produce polynomials. The polynomials were used in the proposed pre-distortion technique to compensate for the nonlinearities of the balanced power amplifier. A simple linear model was designed for behavioural modelling of the memory-less baseband digital pre-distorter. A Simulink IEEE 802.11a OFDM Transceiver system was used to demonstrate validity of the proposed pre-distorter. To the best of authors' knowledge, this study presented excellent results of predistortion system that compensated the nonlinearity behaviour of the balanced RF power amplifier using the Simulink version R2011a.

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Section: Introductionmentioning

confidence: 99%

“…Table1shows the performance of the current work compared a few selected PA's reported in the literature, taking account of operating frequency, output power, efficiency and gain. In[4] a power amplifier consist of up to 54% PAE at 2.14GHzEAI Endorsed Transactions on Creative Technologies 01 2018 -04 2018 | Volume 5 | Issue 15 | e5 B. A. Mohammed et al…”

mentioning

confidence: 99%

Towards a 15.5W Si-LDMOS Energy Efficient Balanced RF Power Amplifier for 5G-LTE Multi-carrier Applications

Mohammed¹,

Hussaini²,

Abd-Alhameed³

et al. 2018

EAI Endorsed Transactions on Creative Technologies

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show abstract

“…The thermal conductivity of GaN is three times higher than that of GaAs, which is very good for high power handling with eased cooling requirements. It also has several more advantages, such as high speed, high power density, and high efficiency [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

2.6 GHz GaN-HEMT Power Amplifier MMIC for LTE Small-Cell Applications

Lim¹,

Lee²,

Kang³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-This paper presents a two-stage power amplifier MMIC using a 0.4 μm GaN-HEMT process. The two-stage structure provides high gain and compact circuit size using an integrated inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as part of the matching network. The two-stage power amplifier MMIC was fabricated with a chip size of 2.0×1.9 mm 2 and was mounted on a 4×4 QFN carrier for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz for the 2.6 GHz band, the power amplifier MMIC exhibited a gain of 30 dB, a drain efficiency of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two power amplifier MMICs for the carrier and peaking amplifiers, a Doherty power amplifier was designed and implemented. At a 6 dB back-off output power level of 39 dBm, a gain of 24.7 dB and a drain efficiency of 43.5% were achieved.

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A 15.5 W Si-LDMOS Balanced Power Amplifier with 53% Ultimate PAE for High Speed LTE

Mohammed

Abduljabbar

Al-Sadoon

et al. 2017

Wireless and Satellite Systems

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325W HVHBT Doherty Final and LDMOS Doherty Driver with 30dB Gain and 54% PAE Linearized to -55dBc for 2c11 6.5dB PAR

Cited by 8 publications

References 4 publications

Towards a 15.5W Si-LDMOS Energy Efficient Balanced RF Power Amplifier for 5G-LTE Multi-carrier Applications

Towards a 15.5W Si-LDMOS Energy Efficient Balanced RF Power Amplifier for 5G-LTE Multi-carrier Applications

2.6 GHz GaN-HEMT Power Amplifier MMIC for LTE Small-Cell Applications

A 15.5 W Si-LDMOS Balanced Power Amplifier with 53% Ultimate PAE for High Speed LTE

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