3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

Lorenzzi, Jean; Lazar, Mihai; Tournier, Dominique; Jegenyés, Nikoletta; Carole, Davy; Cauwet, François; Ferro, Gabriel

doi:10.1021/cg101487g

Cited by 13 publications

(12 citation statements)

References 15 publications

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“…The length of these pillars (below 100 nm in diameter) is around 1.5 μm, which is long enough for the fabrication nano field-effect transistors (FET). The diameter of SiC pillars on 6H-SiC (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) substrate is slightly larger than 100 nm (around 110 nm), but it can be further decreased below 100 nm by optimizing the etching time.…”

Section: Resultsmentioning

confidence: 99%

“…The α-SiC substrates used in this study were product grades of Tankeblue 4H and 6H-SiC (0001) on-axis substrates [9]. The 6H-SiC (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) substrates were grown by the conventional physical vapor transport method, which has been presented elsewhere [10]. For β-SiC (001) substrate, the 3C-SiC layers were heteroepitaxially grown on Si (001) substrates [11].…”

Section: Methodsmentioning

confidence: 99%

“…If a top-down approach is applied into these different polytypes of SiC layer, the SiC nanostructures may easily be achieved with different physical properties, which can lead to further exploit the applications of SiC nanostructures. In this letter, the etching behavior of SiC nanopillars depending on the different polytypes and crystallographic orientations: 4H-SiC (0001), 6H-SiC (0001), 6H-SiC (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) and 3C-SiC (001), is presented.…”

Section: Introductionmentioning

confidence: 99%

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Comparative study on dry etching of α- and β-SiC nano-pillars

et al. 2012

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Comparative study on dry etching of α- and β-SiC nano-pillars

et al. 2012

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“…The DPBs defects emerge unfortunately. The elimination of this kind of defects becomes a hot research topic [68][69][70][71][72][73].…”

Section: The Aspect Of 3c-sic Epitaxymentioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study. GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results. GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga...

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“…Less DPBs were shown to emerge for epilayers grown on 15R substrates compared with films grown on 6H-SiC 15,16 . The growth of DPBs-free 3C-SiC on patterned 4H substrates, using both VLS 17 and CVD 18 , has also been reported. However, this method needs precise lithography and dry etching technique for substrate preparation and only small area free of DPBs are obtained, typically around 200 x 200 µm 2 .…”

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confidence: 98%

Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

Jacobson

Boulle

et al. 2014

ECS J. Solid State Sci. Technol.

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High quality double-position-boundaries free 3C-SiC epilayers have been successfully grown on on-axis (0001) 4H-SiC by chemical vapor deposition at optimized conditions as observed with optical microscopy and X-ray diffraction. The effect of the growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H-2 ratio, N-2 addition and pressure, on the quality of the grown layers is investigated. Different techniques, including microscopic and spectroscopic techniques, are used to characterize the epilayers. High resolution X-ray diffraction shows 2 theta-omega curve with full width at half maximum of only 16 arcsec for the (111) reflection detected from a 35 mu m thick 3C-SiC layer, showing the good structural quality of the layer. Reciprocal space maps confirm the absence of double-position-boundaries in a large depth of the layers. Low temperature photoluminescence measurement shows clear near-bandgap emission with sharp and single peaks, which further verifies the high quality of the epilayers

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3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

Cited by 13 publications

References 15 publications

Comparative study on dry etching of α- and β-SiC nano-pillars

Comparative study on dry etching of α- and β-SiC nano-pillars

CVD solutions for new directions in SiC and GaN epitaxy

Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

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