3C-SiC on Si: A Biocompatible Material for Advanced Bioelectronic Devices

Abstract

Silicon carbide (SiC) has long been known as a robust semiconductor with superior properties to silicon for electronic applications. The cubic form of SiC, known as 3C-SiC, has been researched for non-electronic applications, such as MEMS and biosensors. In particular, our group has demonstrated that 3C-SiC is one of the few semiconductor materials that possesses both bio- and hemacompatibility, thus opening up a plethora of applications for this material. We have pioneered several biomedical devices using 3C-SiC grown on Si substrates, and recently have been investigating the use of this novel material for both continuous glucose monitoring and neural prosthetic applications. We will review nearly a decade of activity in this regard, with particular emphasis on the most promising applications: in vivo continuous glucose monitoring and biomedical implants for connecting the human nervous system to advanced prosthetics.

3C-SiC on Si: A bio- and hemo-compatible material for advanced nano-bio devices

“…In vitro and in vivo studies of 3C-SiC, based on ISO 10993, have shown that this material is suitable for use in biomedical devices [9]. This is consistent with previous literature reports of SiC bio-and hemacompatiblity and the successful clinical use of a-SiC as a non-thrombogenic coating for arterial heart stents.…”

“…We propose the use of 3C-SiC as the base material for numerous long-term biomedical devices [8]. We also have proposed that a-SiC can be utilized as a biocompatible insulator to facilitate reduced electronic cross talk between adjacent conductors in multi-site neural recording probes and MEAs [9]. We have demonstrated the fabrication of several planar neural probes as well as the very limited glial reaction to these probes at 1 month after implantation [16].…”

“…Our a-SiC was deposited at a rate of �4 nm/ min (thickness 200 nm) on (100) Si substrates using plasma enhanced chemical vapor deposition (PECVD); deposition details can be found in [9]. 5 urn thick, 3C-SiC films were grown in a horizontal, low pressure, CVD reactor on (100) silicon (Si) substrates at 1385°C through our established growth process [1].…”

Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects

“…There are many reports on the biomedical application of several forms of SiC by proving biocompatibility of SiC [203,[242][243]. Li et al [242] have shown the superior mechanical and tribological properties of SiC that make it an ideal material for use in orthopedic and other biomedical applications.…”

3C-SiC — From Electronic to MEMS Devices

“…This property can be very helpful for devices subjected to high temperature and compares favorably to challenging wide bandgap materials such as gallium nitride. Furthermore, SiC is also known as a biocompatible material [2], which is deeply valued for biologic applications [3], and is resistant to high-radiative environments [4]. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application.…”