Growth rates from 10 to 38 μm/h were achieved for heteroepitaxial 3C-SiC on Si (100) substrates by using the propane-silane-hydrogen gas chemistry with HCl as a growth additive. A low-pressure horizontal hot-wall CVD reactor was employed to perform the deposition. The growth rate dependences on silane mole fraction, the process pressure and the growth time were determined experimentally. The growth rate dependence on silane mole fraction was found to follow a linear relationship. The 3C-SiC films were characterized by Normaski Optical Microscopy, Scanning Electron Microscopy, Fourier Transform Infrared Spectroscopy, Atomic Force Microscopy and X-ray Diffraction. The X-ray rocking curve taken on the (002) diffraction plane displayed a FWHM of 360 arcsec which indicates that the films are monocrystalline.

Silicon carbide (SiC) has long been known as a robust semiconductor with superior properties to silicon for electronic applications. The cubic form of SiC, known as 3C-SiC, has been researched for non-electronic applications, such as MEMS and biosensors. In particular, our group has demonstrated that 3C-SiC is one of the few semiconductor materials that possesses both bio- and hemacompatibility, thus opening up a plethora of applications for this material. We have pioneered several biomedical devices using 3C-SiC grown on Si substrates, and recently have been investigating the use of this novel material for both continuous glucose monitoring and neural prosthetic applications. We will review nearly a decade of activity in this regard, with particular emphasis on the most promising applications: in vivo continuous glucose monitoring and biomedical implants for connecting the human nervous system to advanced prosthetics.

Silicon carbide (SiC) has long been known as a robust semiconductor with superior properties to silicon for electronic applications. The cubic form of SiC, known as 3C-SiC, has been researched for non-electronic applications, such as

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Silicon carbide (SiC) resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3C-SiC epitaxial film grown on thin Si wafers bonded to polycrystalline SiC substrates. At 673K, up to a 51.75±0.04% change in sensor output current and a change in the device temperature of up to 163.1±0.4K were demonstrated in response to 100% H2 in N2. Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism.