3d circuit integration

Yarema, R.

doi:10.22323/1.057.0017

Cited by 12 publications

(3 citation statements)

References 3 publications

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“…The approach is still emerging and needs to be assessed, especially for its material budget and power dissipation. Within a consortium led by FERMILAB, different architectures were submitted for fabrication, which try to combine high level signal processing with low power dissipation [8].…”

Section: Cmos Pixel Sensors For High Precision Beam Telescopes and Vementioning

confidence: 99%

CMOS Pixel Sensors for High Precision Beam Telescopes and Vertex Detectors

Masi¹

2010

Proceedings of European Physical Society Europhysics Conference on High Energy Physics — PoS(EPS-HEP 2009)

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CMOS sensors of the MIMOSA series are developed at IPHC since a decade and have ended up with full scale devices used in beam telescopes and in demonstrators of future vertex detectors. Since a few years, a fast architecture is being developed in collaboration with IRFU, which aims to speed up the read-out by 1-2 orders of magnitude. The first full scale sensor based on this architecture was fabricated recently and is being tested. Made of ∼660,000 pixels covering an active area of ∼2 cm 2 , it delivers zero-suppressed binary signals, which allow running at ∼10 kframes/s. It equips the beam telescope of the E.U. project EUDET and serves as a forerunner of the sensor equipping the 2 layers of the Heavy Flavor Tracker detector of the STAR experiment at RHIC. This paper overviews the main features and test results of this pioneering sensor. Finally, the issue of radiation tolerance will be addressed, in the context of a newly available CMOS process using a depleted substrate. A prototype sensor was fabricated in this process. First results indicate that fluences of 10 14 n eq /cm 2 may be tolerable for CMOS sensors. Overall, the paper provides an overview of the status and plans of CMOS pixel sensors at the frontier of their achievements and outreach.

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Section: Cmos Pixel Sensors For High Precision Beam Telescopes and Vementioning

confidence: 99%

CMOS Pixel Sensors for High Precision Beam Telescopes and Vertex Detectors

Masi¹

2010

Proceedings of European Physical Society Europhysics Conference on High Energy Physics — PoS(EPS-HEP 2009)

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“…In the "ILC-class" SDR0 chip, the sparsified readout architecture is based on a token passing scheme, which was first implemented by Fermilab IC designers in the VIP chip [9]. This architecture is tailored on the ILC beam structure and is presently based on the assumption that there is a very low probability that a pixel is hit more than once during a bunch train period.…”

Section: Digital Readout Architecturementioning

confidence: 99%

“…The second approach is based on a technology leap exploiting vertical integration processes [9], which promise to overcome typical limitations of standard MAPS as well as of DNW MAPS. In the framework of a consortium between Fermilab, IN2P3 and INFN, the first step in this direction is planned to be the fabrication of a two-tier DNW MAPS by the face-to-face bonding of two 130 nm CMOS wafers.…”

Section: Jinst 4 P03005 4 Future Dnw Maps Developmentsmentioning

confidence: 99%

Status and perspectives of deep N-well 130 nm CMOS MAPS

2009

J. Inst.

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Deep N-Well (DNW) MAPS were developed in two different flavors to approach the specifications of vertex detectors in dissimilar experimental environments such as the Super B-Factory and the ILC. The first generation of MAPS with on-pixel data sparsification and time stamping capabilities is now available and was tested in a beam for the first time in September 2008. These devices are fabricated in a commercial 130 nm CMOS process, and the triple well structure available in such an ultra-deep submicron technology is exploited by using the deep N-well as the charge-collecting electrode. Because of the high integration density of such a technology, complex digital functions can be included in each pixel, implementing a sparsified readout architecture of the pixel matrix with time stamping. This paper reviews the features of the "ILC class" and "SuperB class" MAPS devices, discussing their different design in terms of pixel pitch, analog signal processing, and digital readout architecture. For SuperB, a data-driven, continuously operating readout scheme was adopted along with a macropixel matrix arrangement, whereas for the ILC the matrix is read out in the long intertrain period. In both versions, the address of hit pixels is transmitted off-chip along with the time stamp. The experimental performance of the chips provides an assessment of the Deep N-Well MAPS potential in view of future applications. The paper also discusses the way forward in the development of these devices, outlining the issues that have to be tackled to design full size Deep N-Well MAPS for actual experiments. These sensors could take advantage from technological advances in microelectronic industry, such as vertical integration. The impact of these new technologies on the design and performance of DNW pixel sensors could be large, with potential benefit for various device features, from the charge collection properties to the digital readout architecture.

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Pixel detectors for charged particles

Wermes

2009

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tPixel detectors, as the current technology of choice for the innermost vertex detection, have reached a stage at which large detectors have been built for the LHC experiments and a new era of developments, both for hybrid and for monolithic or semi-monolithic pixel detectors is in full swing. This is largely driven by the requirements of the upgrade programme for the superLHC and by other collider experiments which plan to use monolithic pixel detectors for the first time. A review on current pixel detector developments for particle tracking and vertexing is given, comprising hybrid pixel detectors for superLHC with its own challenges in radiation and rate, as well as on monolithic, so-called active pixel detectors, including monolithic active pixels (MAPS) and DEPFET pixels for RHIC and superBelle.

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3d circuit integration

Cited by 12 publications

References 3 publications

CMOS Pixel Sensors for High Precision Beam Telescopes and Vertex Detectors

CMOS Pixel Sensors for High Precision Beam Telescopes and Vertex Detectors

Status and perspectives of deep N-well 130 nm CMOS MAPS

Pixel detectors for charged particles

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