Pixel detectors for charged particles

Wermes, N.

doi:10.1016/j.nima.2009.01.098

Cited by 31 publications

(17 citation statements)

References 38 publications

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“…This results in a higher sensitivity of CMOS sensors to the bulk damage that can be caused by hits from massive particles (e.g., neutrons and heavy ions) in high energy physics or space applications. In this case, it is mandatory to use high resistivity pixel detectors, which are more tolerant to displacement damage because charge collection is governed by a drift process, and not by a diffusion one as in the undepleted epitaxial layer of standard CMOS sensors [7].…”

Section: A 3d Cmos Readout Chip For High Resistivity Fullydepleted Pmentioning

confidence: 99%

3D vertical integration technologies for advanced semiconductor radiation sensors and readout electronics

2011

2011 4th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI)

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The development of 3D vertical integration in the microelectronic industry brings along significant advantages for pixelated semiconductor radiation sensors in cutting-edge scientific experiments at high luminosity particle accelerators and advanced X-ray sources. These applications set very demanding requirements on the performance of sensors and their readout electronics, in terms of pixel pitch, radiation tolerance, signal-to-noise ratio and capability of handling very high data rates. 3D vertical integration of two or more layers with sensors and CMOS devices naturally leads the designer towards extending pixel-level processing functionalities and achieving novel structures where each layer is optimized for a specific function. This paper reviews the efforts towards the development of novel vertically integrated pixel sensors and discusses the challenges that are being tackled to qualify these devices for actual applications. IntroductionNowadays 3D vertical integration technology is already playing an important role in the design of advanced silicon pixel sensors for commercial imaging applications. The performance of imaging devices can be greatly enhanced by the high-density interconnection of two or more layers with CMOS sensor and advanced readout electronics, which can be thinned for backside illumination and tiled to achieve a large area coverage with no dead regions [1].In the past few years, the developments in this field have suggested that 3D integration could bring along a performance leap for semiconductor radiation detectors in future high energy physics experiments at particle accelerators [2]. In these applications, a fundamental problem will be the reconstruction of charged particle tracks with high resolution pixelated sensors. These sensors, along with the readout electronics, will be required to have a small pixel pitch (≤ 20 Pm in some applications), a high degree of radiation tolerance, a large signal-to-noise ratio, a low mass to minimize particle scattering, a low power dissipation and the capability of handling very high data rates. To meet the requirements of these applications, advanced functions have to be performed in the electronics elementary cell of each pixel to cope with signal-to-noise ratio and high data rate requirements. These functions include amplification, filtering, calibration, discriminator threshold adjustment, analog-todigital conversion, zero suppression (also called data sparsification) and time stamping. 3D integration can be a solution to the problem of integrating all these functions inside a small pixel, avoiding the use of aggressively scaled CMOS, below 100 nm feature size, which can be expensive and challenging for analog circuit design.

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Section: A 3d Cmos Readout Chip For High Resistivity Fullydepleted Pmentioning

confidence: 99%

3D vertical integration technologies for advanced semiconductor radiation sensors and readout electronics

2011

2011 4th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI)

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“…This approach can be satisfactory as far as diamond is used as an electrically insulator and thermal spreading material. However, diamond is intensely investigated also for its radiation hardness, its solar blindness and its nearly tissue equivalence, for applications in high energy physics [8], space experiments [9] and clinical dosimetry [10]. Furthermore, its very favorable biocompatibility and electrochemical properties [11,12] make it a unique material for interfacing living cells.…”

Section: Semiconductor On Diamond Researchmentioning

confidence: 99%

“…The development of high resolution sensors has involved a strong research effort during the last three decades [8]. Pixel sensors are routinely used in optical imaging for commercial purposes, but their application in High Energy Physics (HEP) and space experiments is still a subject of intense investigation.…”

Section: Sod Monolithic Pixel Detectorsmentioning

confidence: 99%

New perspectives for the Silicon-On-Diamond material

Lagomarsino¹,

Parrini²,

Sciortino³

et al. 2010

Proceedings of 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors — PoS

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A recent laser bonding technique has been developed to prepare silicon-on-diamond material. This method allows the independent choice of the quality of the silicon and diamond plates to be processed. This opens a wide field of applications for silicon-on-diamond devices. We present and discuss the laser technique and the experimental results achieved. Two new projects involving relevant issues both in high energy physics and in biological applications are also presented.

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“…Several factors determine the effectiveness of a detector: time response, pixel size, noise, detector thickness, radiation hardness. Nowadays the hybrid pixel technology is the most common in HEP experiments, because it allows both high SNR and good radiation hardness [1]. However, these devices have limitations: the double-layered structure leads to an intrinsically higher material budget, and the need for bump bonding prevents from shrinking the pixel size.…”

Section: Introductionmentioning

confidence: 99%

“…In this area the are currently two main lines of research [1,3]: one focused on integrating part or all of the electronics in a high-resistivity substrate (DEPFET, SOI), and another one concerned with the adaptation of CMOS substrates to particle detection (MAPS). While DEPFETs show high SNR and radiation hardness, their fabrication is very challenging and time-consuming, and the readout mechanisms are still quite slow.…”

Section: Introductionmentioning

confidence: 99%

Devices based on 2D materials for on-chip amplification of ionization charges

Ciarrocchi¹,

Forti²,

Iannaccone³

et al. 2017

Proceedings of the 25th International Workshop on Vertex Detectors — PoS(Vertex 2016)

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Pixels detectors are widely used ionizing radiation detection devices in high-energy physics (HEP) experiments. Segmented detectors have been employed for many years due to the need to simultaneously track the thousands of particles emerging from modern colliders. For more precise and accurate measurements one would like to have faster, less noisy and smaller pixels, but current technology imposes several limits on these characteristics. The aim of this work is to explore the possible applications of bi-dimensional materials such as Graphene or transition metal dichalcogenide monolayers (TMDs) to address these problems. In particular, one wants to determine whether nano-electronic devices based on 2D materials could be used to obtain built-in pre-amplification of the pixel signal, thus achieving better detection performance. The working principle is the field-effect modulation of the channel conductivity in a 2D material-based transistor, due to the presence of ionization charges in a silicon absorber. Several architectures are tested, and a final device of choice is presented, with a sketch of a realistic readout system and its noise figure. The conductance modulation due to incoming particles is found to be more than 30%, resulting in a strong current signal, which leads to very favourable signal-to-noise ratios (SNR).

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Pixel detectors for charged particles

Cited by 31 publications

References 38 publications

3D vertical integration technologies for advanced semiconductor radiation sensors and readout electronics

3D vertical integration technologies for advanced semiconductor radiation sensors and readout electronics

New perspectives for the Silicon-On-Diamond material

Devices based on 2D materials for on-chip amplification of ionization charges

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