3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors

Vallone, Marco; Palmieri, Andrea; Calciati, Marco; Bertazzi, Francesco; Goano, Michele; Ghione, Giovanni; Forghieri, F.

doi:10.1109/nusod.2017.8010064

Cited by 6 publications

(2 citation statements)

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Section: Introductionmentioning

confidence: 79%

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Alasio¹,

Vallone²,

Tibaldi³

et al. 2023

Preprint

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We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (WPDs) of the Cisco platform for data communications in the O-band (1.31 μm), with the goal of optimizing their frequency response while integrating them into low-power systems. The photodetectors under test have an electro-optic bandwidth of more than 40 GHz at a standard bias voltage of -2 V. Bandwidths larger than 10 GHz are observed even at zero bias, suggesting that vertical WPDs can be exploited in optical communication systems with minimal power consumption. In fact, the characterization campaign has allowed the validation of a complex multiphysics model that is providing design guidelines towards bandwidths not only wider than 60 GHz at -2 V, suitable for application in 200 Gbit/s systems, but also wider than 40 GHz at zero bias.

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Section: Introductionmentioning

confidence: 79%

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Alasio¹,

Vallone²,

Tibaldi³

et al. 2023

Preprint

View full text Add to dashboard Cite

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“…Extensive multiphysics simulations combined with experimental characterization of selected WPD variants can offer a deep understanding of the underlying physical processes, critical to develop guidelines for the design and optimization of integrated optical trasceivers that fulfill the demand of wide bandwidth and high power efficiency. Building upon our previous work [31]-[35], we demonstrate here that a multiphysics simulation framework is able to accurately describe the experimental dynamic behavior of the VPIN WPDs of the Cisco platform over a wide range of reverse voltage down to zero bias, and we use this numerical tool towards two goals: first, we propose an optimized design for a VPIN WPD that could be a promising candidate for a 200 Gbit/s receiver at a standard bias voltage of −2 V even without gain peaking; second, always focusing on the intrinsic electro-optic frequency response, we explore the device performance under The paper is structured as follows. In Section II we discuss the nominal geometry of the WPD used as a reference structure, the experimental characterization techniques, and the multiphysics modeling approach.…”

Section: Introductionmentioning

confidence: 85%

TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors

Alasio,

Vallone,

Tibaldi

et al. 2024

J. Lightwave Technol.

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We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (VPIN WPDs) of the Cisco platform for data communications in the O-band (1.31 µm), with the goal of optimizing their frequency response while integrating them into low-power systems. In a large set of WPDs belonging to 6 different structural variants, at a standard bias voltage of −2 V the best specimens exhibit an intrinsic electro-optic bandwidth of more than 40 GHz, which is reduced to about 10 GHz at zero bias. A comprehensive 3D multiphysics model, validated through the characterization campaign, provides design guidelines towards intrinsic bandwidths not only wider than 60 GHz at −2 V, directly suitable for application in 200 Gbit/s systems, but also wider than 40 GHz at zero bias, not including the possible recourse to extrinsic parameter engineering.

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