3D Simulation, Electrical Characteristics and Customized Manufacturing Method for a Hemispherical Electrode Detector

Liu, Manwen; Cheng, Wenzheng; Li, Zheng; Zhao, Zhenyang; Li, Zhihua

doi:10.3390/s22186835

Cited by 2 publications

(1 citation statement)

References 31 publications

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“…In the previous work, we assumed and analyzed a hemispherical detector model, but this detector cannot be read or manufactured [ 31 ]. Then, we provided a scheme for manufacturing a detector, but this scheme still leaves a substrate in the detector [ 32 ]. In this work, we propose a new type of 3D electrode detector, an Implanted-Epi Silicon 3D-Spherical Electrode Detector.…”

Section: Introductionmentioning

confidence: 99%

Design and Simulated Electrical Properties of a Proposed Implanted-Epi Silicon 3D-Spherical Electrode Detector

Cai

et al. 2023

Micromachines

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A new type of 3D electrode detector, named here as the Implanted-Epi Silicon 3D-Spherical Electrode Detector, is proposed in this work. Epitaxial and ion implantation processes can be used in this new detector, allowing bowl-shaped electrodes to penetrate the silicon completely. The distance between the bowl cathode and the central collection electrode is basically the same, thus the total depletion voltage of Implanted-Epi Silicon 3D-Spherical Electrode Detectors is no longer directively correlated with the thickness of the silicon wafer, but only related to the electrode spacing. In this work, we model the device physics of this new structure and use a simulation program to conduct a systematic 3D simulation of its electrical characteristics, including electric potential and electric field distributions, electron concentration profile, leakage current, and capacitance, and compare it to the traditional 3D detectors. The theoretical and simulation study found that the internal electric potential of the new detector was smooth and no potential saddle point was found. The electric field is also uniform, and there is no zero field and a low electric field area. Compared with the traditional silicon 3D electrode detectors, the full depletion voltage is greatly reduced and the charge collection efficiency is improved. As a large electrode spacing (up to 500 μm) can be realized in the Implanted-Epi Silicon 3D-Spherical Electrode Detector thanks to their advantage of a greatly reduced full depletion voltage, detectors with large pixel cells (and thus small dead volume) can be developed for applications in photon science (X-ray, among others).

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Section: Introductionmentioning

confidence: 99%

Design and Simulated Electrical Properties of a Proposed Implanted-Epi Silicon 3D-Spherical Electrode Detector

Cai

et al. 2023

Micromachines

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Study of electrical properties and detection mechanism of a practical novel 3D-Spherical Electrode Detector

Tan

Li²,

Li³

et al. 2023

Front. Mater.

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Among the 3D electrode Si detectors for high energy particle and X-ray detection, the traditional 3D-Trench electrode Si detector is a semiconductor detector that is widely used and discussed. Aiming at removing the shortcomings of the traditional 3D-Trench electrode Si detectors such as uneven electric field distribution, asymmetric electric potential, and the existence of some dead zone, we propose a new type 3D-Spherical Electrode Detectors and carry out extensive and systematic studies of their physical properties. We simulated detector electric field, electric potential, electron concentration distribution, full depletion voltage, leakage current, capacitance, the incident particle induced transient current and the weighting field. We systematically studied and analyzed detector’s electrical characteristics. By comparing with the traditional 3D-Trench electrode Si detectors, the new detector structure has more uniform electric field and potential, and less depletion voltage, leakage current and capacitance.

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3D Simulation, Electrical Characteristics and Customized Manufacturing Method for a Hemispherical Electrode Detector

Cited by 2 publications

References 31 publications

Design and Simulated Electrical Properties of a Proposed Implanted-Epi Silicon 3D-Spherical Electrode Detector

Design and Simulated Electrical Properties of a Proposed Implanted-Epi Silicon 3D-Spherical Electrode Detector

Study of electrical properties and detection mechanism of a practical novel 3D-Spherical Electrode Detector

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