4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

Abstract

AlGaAsSb/InGaAsSb single-quantum-well (SQW) laser diodes emitting at 2 μm were fabricated and tested. At 10–15 °C, the uncoated SQW lasers with 2–3 mm cavity lengths exhibit a threshold current density of 115 A/cm2, a continuous-wave output power of 1.9 W, a differential efficiency of 53%, and a quasi-continuous-wave output power of 4 W. Their performance deteriorates rapidly as output losses increase beyond 10 cm−1.

Sb-Based Mid-Infrared Diode Lasers

“…All the measurements were performed at room temperature. The measured fast axis profiles for the two different injection currents, 2 1 1h and 4 Ith, were almost identical, exhibiting a Gaussian shape with full-width at half-maximum (FWHM) divergence angle of -670, which compares well with the calculated value of 60'. Figure 11 b) displays the calculated and measured transversal FF angular distribution for the above mentioned diode lasers, emitting at 1.84 and 2.34 pm.…”

“…Upon increasing the injection current, the profile shape changes, showing higher order side peaks, and the FW14M of the divergence angle increases somewhat from 4.80 (21,,) to 5.60 (41,0). 4 Ith the first and second order modes are clearly resolved. The angular position of the measured side peaks originating from higher order modes is in excellent agreement with the calculations.…”

“…For the 2-3 pin wavelength interval, the conventional interband diode laser approach is adopted, employing GaInAsSb/AlGaAsSb type-I QW/barrier layers as active region grown on GaSb substrates [ 1,2]. Diode lasers based on the (AlGaIn)(AsSb) material system covering the above given spectral range demonstrated excellent room temperature performances, including very low threshold current density (Jh), very low internal loss coefficient, and high internal quantum efficiency [3][4][5][6][7]. Furthermore, cw output power of 1.9 W at 15'C has been obtained from 200 pn x 2 mm broad area diode lasers emitting at 2 pm [4].…”

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

“…The results indicated that the localized states are related to the Sb component of the GaAsSb alloy; however, this component also leads to poor crystal quality in the material, and the applications of GaAsSb alloys are limited owing to the deterioration in quality. InGaAsSb, which is lattice-matched to GaSb, has been studied in particular depth, in part because it is an important active region constituent of diode lasers emitting in the 2-3 µm range [23]. Early work on the direct band gap in GaSb-rich GaInAsSb has been summarized by Karouta et al, InGaAsSb, which is lattice-matched to GaSb, has been studied in particular depth, in part because it is an important active region constituent of diode lasers emitting in the 2-3 µm range [23].…”

“…InGaAsSb, which is lattice-matched to GaSb, has been studied in particular depth, in part because it is an important active region constituent of diode lasers emitting in the 2-3 µm range [23]. Early work on the direct band gap in GaSb-rich GaInAsSb has been summarized by Karouta et al, InGaAsSb, which is lattice-matched to GaSb, has been studied in particular depth, in part because it is an important active region constituent of diode lasers emitting in the 2-3 µm range [23]. Early work on the direct band gap in GaSb-rich GaInAsSb has been summarized by Karouta et al, who proposed a bowing parameter of 0.6 eV [24].…”