40 Gb/s TDM system using InP HBT IC technology

Krishnamurthy, K.; Vetury, R.; Shou, A.; Jaganathan, S.; Cheng, K. Y.; Chow, J.; Mensa, D.; Zhang, Jintao; Gontijo, I.; Vu, Steve; Winczewski, C.; Liu, Yet-zen; Pullela, R.; Rodwell, M.J.W.

doi:10.1109/mwsym.2003.1212581

Cited by 7 publications

(1 citation statement)

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“…3)were designed in an In Al As / InGaAs / InP DHBT technology 11 . The smallest devices with 1 x 3 mm 2 emitter area exhibit a typical current gain of 40, with a 140 GHz unity current gain cut-off frequency (f T ) and 160 GHz power gain cut-off frequency (i max ).…”

Section: Ic Technologymentioning

confidence: 99%

40 Gb/s TDM SYSTEM TRANSCEIVER PROTOTYPE IN InP HBT TECHNOLOGY

Krishnamurthy

Shou

Vetury

et al. 2005

Int. J. Hi. Spe. Ele. Syst.

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A time-division-multiplexing (TDM) system transceiver with 4–channel 10 Gb/s interfaces to achieve 40 Gb/s non-return to zero (NRZ) transmission is presented. The front-end components are implemented in an indium phosphide double hetero-junction bipolar transistor (InP DHBT) technology. They include a 4:1 multiplexer with a voltage controlled oscillator and clock multiplication unit, modulator drivers for electro-absorption and differential lithium-niobate modulators, trans-impedance amplifier, limiting amplifier and 1:4 demultiplexer with clock and data recovery circuit. The transceiver was used to teat optical transmission over a 2.26 km link with a 40 Gb/s, 231-1 pseudo-random bit sequence (PRBS) data. The transmitter achieves better than 12.9 dB extinction ratio, 1 ps added root mean square (RMS) jitter and 4 dBm output power. Without any optical amplification the receiver achieves -9.1 dBm back to back sensitivity at a bit error rate (BER) of 10-12 and a high dynamic range of 12.5 dBm.

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Section: Ic Technologymentioning

confidence: 99%