42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT

Lee, Je‐Hun; Kim, Do Hyun; Yang, Dong Ju; Hong, Seokmoo; Yoon, Kwang Sub; Hong, Pil Soon; Jeong, Changwook; Park, Hong Sik; Kim, Shi Yul; Lim, Soon Kwon; Kim, Sang Soo; Son, Kyoung Seok; Kim, Tae Sang; Kwon, Jang Yeon; Lee, Sang Yoon

doi:10.1889/1.3069740

Cited by 236 publications

(89 citation statements)

References 5 publications

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“…(e) 2008, 12.1 inch 1280×768 WXGA, Samsung [11]. (f ) 2008, 15 inch 1024×768 XGA, Samsung [13]. All images reproduced with permission.…”

Section: Active-matrix Displays and Circuits Based On Aos Tft Arraysmentioning

confidence: 99%

“…Samsung group joined this competition, reporting AM OLED displays [9][10][11], and now offer the world's largest AM-OLED at 12.1 inches [11,12], as well as a 15-inch liquid-crystal display (LCD) operating at 240 Hz [13], which was reported at the Society of Information Display meeting in April 2008.…”

Section: Active-matrix Displays and Circuits Based On Aos Tft Arraysmentioning

confidence: 99%

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Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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“…(e) 2008, 12.1 inch 1280×768 WXGA, Samsung [11]. (f ) 2008, 15 inch 1024×768 XGA, Samsung [13]. All images reproduced with permission.…”

Section: Active-matrix Displays and Circuits Based On Aos Tft Arraysmentioning

confidence: 99%

Section: Active-matrix Displays and Circuits Based On Aos Tft Arraysmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…Thin Film Transistor (TFT), the main technology of the AMLCD subgroup, can also be divided regarding the material used for its elaboration, into amorphous silicon (a-Si), continuous grain silicon (CGS) and low temperature polycrystalline silicon (LTPS TFT). A new approach is the indium-gallium-zincoxide (IGZO) technology [26] developed by Sharp.…”

Section: Liquid Crystal Display (Lcd)mentioning

confidence: 99%

Review of Display Technologies Focusing on Power Consumption

2015

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This paper provides an overview of the main manufacturing technologies of displays, focusing on those with low and ultra-low levels of power consumption, which make them suitable for current societal needs. Considering the typified value obtained from the manufacturer's specifications, four technologies-Liquid Crystal Displays, electronic paper, Organic Light-Emitting Display and Electroluminescent Displays-were selected in a first iteration. For each of them, several features, including size and brightness, were assessed in order to ascertain possible proportional relationships with the rate of consumption. To normalize the comparison between different display types, relative units such as the surface power density and the display frontal intensity efficiency were proposed. Organic light-emitting display had the best results in terms of power density for small display sizes. For larger sizes, it performs less satisfactorily than Liquid Crystal Displays in terms of energy efficiency.

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“…As transistors M3 and M5 are equal, (10) clearly shows that this topology increases the small signal resistance of M3 by a factor of 1+ η. The technique implemented for biasing this circuit is similar to the one described in section III.A.…”

Section: B A-igzo Differential Amplifier With Positive Feedback and mentioning

confidence: 96%

“…Many applications of a-IGZO Thin Film Transistors (TFTs) have been demonstrated already, such as large AMOLED display backplanes [10], USB powered NFC tags [11], and flexible x-ray imagers [12].…”

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confidence: 99%

Analogue Frontend Amplifiers for Bio-Potential Measurements Manufactured With a-IGZO TFTs on Flexible Substrate

Garripoli

Steen

Torricelli

et al. 2017

IEEE J. Emerg. Sel. Topics Circuits Syst.

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Three novel differential amplifier topologies using double gate a-IGZO TFTs on flexible substrate are presented in this paper. The designs exploit positive feedback and a load with self-biased top gate to achieve the highest static gain in single stage a-IGZO amplifiers reported to date. After fabrication, the three amplifiers exhibit respectively a static gain of 14 dB, 21.5 dB and 30 dB, with a bandwidth of 2 kHz, 400 Hz, and 150 Hz. Also, for each circuit the input referred noise has been measured to be 420 μVrms, 195 μVrms and 146 μVrms, respectively. Based on these results, the a-IGZO amplifier providing the highest gain is suitable as front-end for heart rate measurements and, with some further optimization verified in simulation, can also be used for other bio-potential applications, like electro hysterogram and electro cardiogram

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42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT

Cited by 236 publications

References 5 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Review of Display Technologies Focusing on Power Consumption

Analogue Frontend Amplifiers for Bio-Potential Measurements Manufactured With a-IGZO TFTs on Flexible Substrate

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