48-2:Invited Paper: N- and P-type Metal-Oxides for Quantum Dot Light Emitting Diodes

Abstract

We reviewed n-and p-type metal oxides for quantum-dot lightemitting diode (QLED) application. N-type metal oxides such as ZnO, Al doped ZnO and Cs 2 CO 3 doped ZnO and Li doped ZnO could be used for electron injection/transport layer and p-type oxides such as NiO x , doped NiO x , CuO x , SnO for hole injection/transport layer. And, the metal oxide n-p junction can be also used as charge generation layer for QLED. We have applied these n-type and p-type metal oxides for QLEDs.

81‐2: High Performance Red Cadmium‐free Inverted Quantum Dot Light Emitting Diodes

“…Recently, several techniques such as Li:ZnO, AZO, double ETL (ZnO/Cs2CO3), PEIE, have been reported to improve charge carrier injection and efficiency of QLEDs. [8][9][10][11][12][13][14] In this work, we report cadmium-free (InP based QD) inverted red QLEDs with Mg doped ZnO nanoparticles as the ETL and stacked organic hole transport layers (HTL) for attaining high efficiency and excellent device performances. The red QLED containing optimized Mg (15%) doped ZnO layer exhibits maximum external quantum efficiency (EQE) of 4.46%.…”