4H‐SiC MISFETs with Nitrogen‐Containing Insulators

Noborio, Masato; Suda, Jun; Beljakowa, Svetlana; Krieger, Michael; Kimoto, Tsunenobu

doi:10.1002/9783527629077.ch10

Cited by 5 publications

(3 citation statements)

References 63 publications

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“…For example, chemical vapor deposition of a thin SiN buffer layer on the Si-face of 4H-SiC followed by SiO 2 deposition and N 2 O annealing, has been reported to lower the D it and increase the field-effect mobility to above 30 cm 2 /V.s in lateral n-channel devices [85]. This is an improvement in efficiency compared to gates formed thermally in N 2 O, highlighting the benefits of deposited dielectrics.…”

Section: Deposited Oxidesmentioning

confidence: 75%

Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond

Rozen¹

2012

Physics and Technology of Silicon Carbide Devices

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Section: Deposited Oxidesmentioning

confidence: 75%

Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond

Rozen¹

2012

Physics and Technology of Silicon Carbide Devices

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“…The density of interface states in 4H-SiC MOS structures has been extensively studied. A common observation is a relatively flat distribution in the bandgap with an exponential increase towards the conduction band edge E C [10][11][12] . Whereas the former part is often assigned to carbon-related defects directly at the interface 10,13 , the increase towards E C stems from electron traps in the oxide near the 4H-SiC/SiO 2 interface, so-called near interface traps (NITs) 14 .…”

Section: Resultsmentioning

confidence: 99%

An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors

et al. 2019

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are key devices for next-generation power electronics. However, accurate determination of device parameters from 3-terminal characteristics is hampered by the presence of interface traps. Here we present a method that, in contrast to previous evaluation schemes, explicitly considers those defects. A well-tractable parametrization of the SiC/SiO 2-specific interface trap spectrum is introduced that reflects the body of known data. With this ingredient, we develop an analysis that targets for an accurate determination of device parameters from simple 3terminal characteristics. For its validation, we investigate MOSFETs with significantly different defect densities. The resulting parameterscharge carrier density, mobility and threshold voltageare in excellent agreement with Hall effect investigations on the very same devices, avoiding systematic errors inherent to conventional evaluation techniques. With this adapted scheme, 4H-SiC power MOSFETs, even packaged, can be meaningfully characterized, speeding up innovation cycles in energy-saving power electronics.

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“…Conventional MOSFETs will be discussed in detail elsewhere [4]; their main features are: i) only N-implanted devices have a large negative threshold voltage V th ≈ -28 V and a high effective channel mobility µ eff ≈ 50 cm 2 /Vs; ii) N-and Al-coimplanted MOSFETs possess a strongly improved device performance; depending on the oxide thickness, positive V th -values are reached and µ eff is still in the range of 30 cm 2 /Vs.…”

Section: Resultsmentioning

confidence: 99%

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer

Reshanov¹,

Beljakowa

Frank

et al. 2009

MSF

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Conventional MOSFETs and Hall-bar MOSFETs are fabricated side by side by over-oxidation of N-implanted or N-/Al-coimplanted 4H-SiC layers. It is demonstrated that the N-/Al-coimplanted MOSFETs possess a positive threshold voltage at room temperature and reach high values of the channel mobility. The effective electron mobility and Hall mobility in Hall-bar MOSFETs are 31 cm2/Vs and 150 cm2/Vs, respectively, indicating a high density of interface traps in spite of the excellent high mobility values.

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4H‐SiC MISFETs with Nitrogen‐Containing Insulators

Cited by 5 publications

References 63 publications

Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond

Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond

An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer

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