4H-SiC p-i-n diode as Highly Linear Temperature Sensor

Rao, Sandro; Pangallo, Giovanni; Corte, Francesco G. Della

doi:10.1109/ted.2015.2496913

Cited by 48 publications

(18 citation statements)

References 24 publications

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“…Equation (2) makes explicit the linear dependence V D -T as long as the non-linear contribution of I s can be considered negligible with respect to I D [ 24 , 25 ].…”

Section: Device Structurementioning

confidence: 99%

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Rao

Pangallo

Corte

2016

Sensors

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Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

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“…Equation (2) makes explicit the linear dependence V D -T as long as the non-linear contribution of I s can be considered negligible with respect to I D [ 24 , 25 ].…”

Section: Device Structurementioning

confidence: 99%

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Rao

Pangallo

Corte

2016

Sensors

Self Cite

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“…SiC p-n diodes can be a suitable alternative for operations at raised temperatures exceeding 600 • C, owing to their stability and the lower dependence of their saturation current on temperature [3]. Moreover, the low saturation current of the p-i-n diode, well below the forward biasing current at high temperatures, reduces the nonlinear effects in the V D -T characteristics, thus allowing the design and fabrication of highly linear sensors operating in a wider temperature range [9]. All of these reported simple devices show low sensitivities and relatively poor linearity.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices

et al. 2020

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Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this paper presents a comparison of the thermal sensitivity variation trend in temperature sensors, based on dual 4H-SiC junction barrier Schottky (JBS) diodes and Schottky barrier diodes (SBDs). The forward bias current–voltage characteristics were acquired by sweeping the DC bias voltage from 0 to 3 V. The dual JBS sensor exhibited a higher peak sensitivity (4.32 mV/K) than the sensitivity exhibited by the SBD sensor (2.85 mV/K), at temperatures ranging from 298 to 573 K. The JBS sensor exhibited a higher ideality factor and barrier height owing to the p–n junction in JBS devices. The developed sensor showed good repeatability, maintaining a stable output over several cycles of measurements on different days. It is worth noting that the ideality factor and barrier height influenced the forward biased voltage, leading to a higher sensitivity for the JBS device compared to the SBD device. This allows the JBS device to be suitably integrated with SiC power management and control circuitry to create a sensing module capable of working at high temperatures.

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“…Employing MEMS and IC technologies, several temperature sensing devices have been successfully demonstrated for a working temperature of up to 300 °C, including Schottky diodes and p – n junctions . However, the performance of these devices significantly declines at high temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…However, the performance of these devices significantly declines at high temperatures. For example, 4H–SiC Schottky junction temperature sensors have been demonstrated with a sensitivity of 2.66 mV K −1 and linearity up to 573 K . The significant decrease of the Schottky barrier at elevated temperatures has limited applications of such sensing devices which are only capable of operating in the low temperature range.…”

Section: Introductionmentioning

confidence: 99%

Thermoresistance of p‐Type 4H–SiC Integrated MEMS Devices for High‐Temperature Sensing

et al. 2019

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There is an increasing demand for the development and integration of multifunctional sensing modules into power electronic devices that can operate in high temperature environments. Here, the authors demonstrate the tunable thermoresistance of p-type 4H-SiC for a wide temperature range from the room temperature to above 800 K with integrated flow sensing functionality into a single power electronic chip. The electrical resistance of p-type 4H-SiC is found to exponentially decrease with increasing temperature to a threshold temperature of 536 K. The temperature coefficient of resistance (TCR) shows a large and negative value from À2100 to À7600 ppm K À1 , corresponding to a thermal index of 625 K. From the threshold temperature of 536-846 K, the electrical resistance shows excellent linearity with a positive TCR value of 900 ppm K À1 . The authors successfully demonstrate the integration of p-4H-SiC flow sensing functionality with a high sensitivity of 1.035 μA(m s À1 ) À0.5 mW À1 . These insights in the electrical transport of p-4H-SiC aid to improve the performance of p-4H-SiC integrated temperature and flow sensing systems, as well as the design consideration and integration of thermal sensors into 4H-SiC power electronic systems operating at high temperatures of up to 846 K.

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4H-SiC p-i-n diode as Highly Linear Temperature Sensor

Cited by 48 publications

References 24 publications

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices

Thermoresistance of p‐Type 4H–SiC Integrated MEMS Devices for High‐Temperature Sensing

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