5.8 A 9.3nW all-in-one bandgap voltage and current reference circuit

Ji, Youngwoo; Jeon, Cheonhoo; Son, Hyeonwi; Kim, Byungsub; Park, Hong-June

doi:10.1109/isscc.2017.7870280

Cited by 77 publications

(36 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A reference voltage circuit achieves a low TC by combining two voltages being, respectively, proportional (PTAT) and complementary (CTAT) to the absolute temperature (T). In bipolar junction transistor (BJT) bandgap references, both the PTAT and CTAT voltages are generated by means of p‐n junctions, 10,11 whereas in hybrid bandgaps the PTAT voltage is generated by MOS devices, possibly combined with resistors 12‐14 . Instead, in a MOS reference, both CTAT and PTAT voltages are generated by MOS transistors 15,16 …”

Section: Introductionmentioning

confidence: 99%

“…Remarkable research activity has been also carried out to push the power consumption of voltage references in the hundreds of pW range, 12,15,17 by exploiting the leakage current of a MOS device to bias the circuit 14‐16,18,19 . However, these architectures exhibit small operative TRs due to the high variability of the bias current, which becomes too small to mantain target performance at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Caselli

Liempd

Boni

et al. 2021

Circuit Theory & Apps

View full text Add to dashboard Cite

Summary The paper describes the implementation of a bandgap reference based on native‐MOSFET transistors for low‐power sensor node applications. The circuit can operate from −55°C to 125°C and with a supply voltage ranging from 1.5 to 4.2 V. Therefore, it is compatible with the temperature range of automotive and military‐aerospace applications, and for direct Li‐Ion battery attach. Moreover, the circuit can operate without any dedicated start‐up circuit, thanks to its inherent single operating point. A mathematical model of the reference circuit is presented, allowing simple portability across technology nodes, with current consumption and silicon area as design parameters. Implemented in a 55‐nm CMOS technology, the voltage reference achieves a measured average (maximum) temperature coefficient of 28 ppm/°C (43 ppm/°C) and a measured sample‐to‐sample variation within 57 mV, with a current consumption of 420 nA at 27°C.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Caselli

Liempd

Boni

et al. 2021

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…[8][9][10][11] are all able to achieve a TC < 100 ppm/ • C but consume from 35 µW to 0.648 mW, which is far too much power for our RAMP system. Other above-1 V voltage reference circuits have been able to simultaneously maintain a low TC and power consumption less than 10 µW by using devices that are not available in standard CMOS processes, such as anti-doped NMOS devices [12], native NMOS devices [13], and NPN transistors [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

A Low-Power Voltage Reference Cell with a 1.5 V Output

Navidi

Graham

2018

JLPEA

View full text Add to dashboard Cite

A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (TC) of the reference voltage. This circuit was fabricated in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) process. It generates a 1.52 V output with a TC of 42 ppm/ • C from −70 • C to 85 • C while consuming only 1.11 µW.

show abstract

“…These voltage references should be insensitive to variations in process, temperature and supply voltage [1][2][3][4][5][6]. The performance of many mixed analog/digital systems is limited by inaccuracies and power supply noise coupling errors in integrated voltage references.…”

Section: Introductionmentioning

confidence: 99%

A Resistorless Voltage Reference with High-order Temperature Curvature Compensation in 55 nm CMOS Process

Zhang²,

Zhang

et al. 2017

Proceedings of the 2017 5th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering (ICMMCCE 20

View full text Add to dashboard Cite

This paper presents a temperature/supply stable and resistorless voltage reference for high-precision portable electronic products. the reference obtains a good temperature coefficient over a wide temperature range through high-order curvature compensation. In order to reduce the temperature nonlinearity, the piecewise linear temperature curvature compensation circuit is used. The voltage reference is simulated with 55nm CMOS technology. It operates at the voltage of 2.5V and generates a stable voltage at 0.742V with a minimal temperature coefficient of 3.19ppm/℃ for temperature ranging from -40 to 125℃.

show abstract

5.8 A 9.3nW all-in-one bandgap voltage and current reference circuit

Cited by 77 publications

References 4 publications

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

A Low-Power Voltage Reference Cell with a 1.5 V Output

A Resistorless Voltage Reference with High-order Temperature Curvature Compensation in 55 nm CMOS Process

Contact Info

Product

Resources

About